A Broadband W-band Subharmonic Mixers Circuit Based on Planar Schottky Diodes

2012 ◽  
Author(s):  
Fuqun Zhong ◽  
Bo Zhang ◽  
Yong Fan ◽  
Minghua Zhao ◽  
Xiaofan Yang
Keyword(s):  
Schottky Diodes ◽  
W Band ◽  
Subharmonic Mixers

scholarly journals The Design of Terahertz Frequency Quadruplers Based on Discrete Schottky Diodes

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 69
Author(s):  
Yuhang Li ◽  
Dehai Zhang ◽  
Jin Meng ◽  
Haotian Zhu ◽  
Siyu Liu
Keyword(s):  
Output Power ◽  
Schottky Diodes ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Peak Output Power ◽  
W Band ◽  
Low Pass ◽  
Matching Structure ◽  
Better Than ◽  
Gradient Line

On the basis of the W-band power source, a single-stage frequency quadrupler method was used to implement two 335 GHz frequency quadruplers. The two frequency quadruplers adopted a traditional binomial matching structure and an improved gradient line matching structure, respectively. An idle loop was added to the overall circuit in the design of the DC filter and low-pass filter. The improved gradient line matching structure reduced the circuit length while increasing the bandwidth, effectively reducing the power loss on the transmission line. A micro-strip circuit was fabricated with a 50 μm thick quartz circuit and was mounted onto a split waveguide block. The results showed that the output power of the quadrupler with the improved matching structure was better than that of the quadrupler with the conventional matching structure. The peak output power of the improved frequency quadrupler was 4.75 mW at 333 GHz when driven with 200 mW. In contrast, this improved structure broadened the bandwidth by 8 GHz and reduced the length of the substrate by 0.607 mm, effectively reducing the length of the traditionally designed circuit by 11.5%.

Properties of Heteroepitaxial 3C-SiC Layer on Si Using Si2(CH3)6 by CVD

1999 ◽  
Vol 572 ◽  
Author(s):  
Y. Chen ◽  
Y. Masuda ◽  
Y. Nishlo ◽  
K. Matsumoto ◽  
S. Nishino
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Schottky Diodes ◽  
Acoustic Scattering ◽  
Stress And Strain ◽  
W Band ◽  
Raman Measurement ◽  
Van Der Pauw ◽  
Cubic Silicon Carbide ◽  
Sic Films

ABSTRACTSingle crystal cubic silicon carbide ( 3C-SiC ) has been deposited on Si(100) by atmospheric CVD at 1350°C using Si2(CH3)6. The 3C-SiC epilayers were characterized by XRD, Raman scattering and photoluminescence (PL). The 3C-SiC distinct TO near 796 cm−1 and LO near 973 cm−1 were recorded by Raman measurement. The PL spectra of SiC films at 11K included the nitrogen-bound exciton (N-BE) lines, the ‘defect-related’ W band near 2.15eV, and 2.13eV peak corresponding to D-A pair recombination as well as the ‘divacancy-related’ D 1 peak at 1.97eV. The thickness dependences of Raman and PL measurement were made and it was observed that tensile stress and strain in films decrease with increasing film thickness. Electrical properties of the films were measured by making schottky diodes and using Van der Pauw method. Above 300K, the electron mobility changed as μH ∼ T−1.45 ∼ −1.56 and the highest mobility was about 400 cm2V−1s−1 at room temperature. In 3C-SiC the scattering processes are affected prominently by acoustic scattering in this temperature range.

scholarly journals Accurately Modeling of Zero Biased Schottky-Diodes at Millimeter-Wave Frequencies

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 696 ◽  
Author(s):  
Jéssica Gutiérrez ◽  
Kaoutar Zeljami ◽  
Tomás Fernández ◽  
Juan Pablo Pascual ◽  
Antonio Tazón
Keyword(s):  
Flip Chip ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Electromagnetic Simulation ◽  
Frequency Noise ◽  
Noise Sources ◽  
Simulation Tools ◽  
W Band ◽  
3D Em ◽  
Chip Attachment

This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.

Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes

2012 ◽  
Vol 33 (11) ◽  
pp. 115007 ◽  
Author(s):  
Changfei Yao ◽  
Ming Zhou ◽  
Yunsheng Luo ◽  
Yigang Wang ◽  
Conghai Xu
Keyword(s):  
Millimeter Wave ◽  
Schottky Diodes ◽  
Subharmonic Mixers

scholarly journals Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1450
Author(s):  
Jéssica Gutiérrez ◽  
Kaoutar Zeljami ◽  
Juan Pablo Pascual ◽  
Tomás Fernández ◽  
Antonio Tazón
Keyword(s):  
Schottky Diode ◽  
State Of The Art ◽  
Low Cost ◽  
Schottky Diodes ◽  
Zero Bias ◽  
Simulation Tools ◽  
W Band ◽  
Intensive Use ◽  
Em Simulation ◽  
3D Em

This paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed.

Schottky diodes based on 2D materials for environmental gas monitoring: a review on emerging trends, recent developments and future perspectives

2021 ◽  
Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout
Keyword(s):  
Gas Sensing ◽  
2D Materials ◽  
Schottky Diodes ◽  
High Sensitivity ◽  
Future Perspectives ◽  
Working Temperature ◽  
Emerging Trends ◽  
Gas Sensing Properties ◽  
Recent Developments ◽  
Sensitivity And Selectivity

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.

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