Mechanical Properties of Polymer Dielectric Films at ElevatedTemperatures

2006 ◽  
Author(s):  
M. van Soestbergen ◽  
L. J. Ernst ◽  
K. M. B. Jansen ◽  
W. D. van Driel
Keyword(s):  
Mechanical Properties ◽  
Dielectric Films ◽  
Polymer Dielectric

Scalable Processing Ultrathin Polymer Dielectric Films with a Generic Solution Based Approach for Wearable Soft Electronics

2019 ◽  
Vol 4 (7) ◽  
pp. 1800681 ◽  
Author(s):  
Sujie Chen ◽  
Sai Peng ◽  
Wenjian Sun ◽  
Guoying Gu ◽  
Qing Zhang ◽  
...  
Keyword(s):  
Dielectric Films ◽  
Polymer Dielectric ◽  
Generic Solution ◽  
Soft Electronics

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Brillouin light scattering studies of the mechanical properties of ultrathin low-k dielectric films

2006 ◽  
Vol 100 (1) ◽  
pp. 013507 ◽  
Author(s):  
A. Link ◽  
R. Sooryakumar ◽  
R. S. Bandhu ◽  
G. A. Antonelli
Keyword(s):  
Mechanical Properties ◽  
Light Scattering ◽  
Dielectric Films ◽  
Brillouin Light Scattering ◽  
Low K

Research on some Key Mechanical Properties of Silicon Nitride Thin Films Deposited by PECVD

2015 ◽  
Vol 742 ◽  
pp. 773-777
Author(s):  
Qun Feng Yang ◽  
Jian Yi Zheng ◽  
Jun Qing Wang ◽  
Jun Hui Lin ◽  
Xue Nan Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Mechanical Characteristics ◽  
Dielectric Films ◽  
Rotating Beam ◽  
Atomic Force ◽  
Scanning Electron

The purpose of this work is to study the mechanical characteristics of the silicon nitride(SiNx) thin films prepared by PECVD technique, some researches as follows were carried out. First, the SiNx thin films were deposited on the two different substrates. Then, the atomic force microscope (AFM) was adopted to test the surface quality of the SiNxfilms, and the scanning electron microscope (SEM) was used to test the section morphology of the SiNxthin films. Finally, the rotating beam structures was applied to measure the residual stress in the SiNx films. The SiNxthin films with low stress can be fabricated through PECVD, in which the surface roughness values(Ra) are 1.261 nm and 2.383nm, and the residual stress is 43.5 kPa. Therefore, the SiNxthin films deposited by PECVD are suitable for the preparation of device dielectric films in MEMS.

Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

2004 ◽  
Vol 95 (3) ◽  
pp. 967-976 ◽  
Author(s):  
Jeremy Thurn ◽  
Robert F. Cook ◽  
Mallika Kamarajugadda ◽  
Steven P. Bozeman ◽  
Laura C. Stearns
Keyword(s):  
Mechanical Properties ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Chemical Vapor Deposited ◽  
Stress Hysteresis
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