Aim::
Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates.
Objective::
Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated
and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and
corresponding up and down-capacitances are obtained.
Methods::
The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both
actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a
prime candidate for phase shifter application. This is presented in this manuscript with a keen focus
on improvement capability by changing transmission line width, and also of overlap area; where
dielectric constant of the substrate also plays a vital role.
Results::
The present work exhibits very low down-capacitance over the spectrum whereas considerable
amount of up-capacitance. Also when overall performance in terms of all loss parameters are
considered, switch provides very low insertion loss, good return loss under actuated state and standard
isolation loss.
Conclusion::
Reduction of transmission line width of about 33% improved the performance of the switch by
increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave
spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as
compared with other published literature. Moreover, a better combination of both return loss, isolation
loss and insertion loss are reported in this present work compared with all other published data so far.
Fabrication and measurements of direct contact type RF MEMS switch