An Improved Physically Based Compact C-V Model for MOS Devices with High-K Gate Dielectrics

2006 ◽  
Author(s):  
Md. Itrat Bin Shams ◽  
K. M. Masum Habib ◽  
Rajib Mikail ◽  
Quazi Deen Mohd Khosru ◽  
A. N. M Zainuddin ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Mos Devices ◽  
High K ◽  
Physically Based

Methods to Improve Properties of Gate Dielectrics in Metal-Oxide-Semiconductor

2012 ◽  
Vol 463-464 ◽  
pp. 1341-1345 ◽  
Author(s):  
Chong Liu ◽  
Xiao Li Fan
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Dielectric Materials ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Physical Limitation ◽  
Low Leakage ◽  
Mos Devices ◽  
Low Leakage Current ◽  
High K

This essay aims to introduce development of gate dielectrics. In present-day society, Si-based MOS has met its physical limitation. Scientists are trying to find a better material to reduce the thickness and dimension of MOS devices. While substrate materials are required to have a higher mobility, gate dielectrics are expected to have high k, low Dit and low leakage current. I conclude dielectrics in both Si-based and Ge-based MOS devices and several measures to improve the properties of these gate dielectric materials. I also introduce studies on process in our group and some achievements we have got. Significantly, this essay points out the special interest in rare-earth oxides functioning as gate dielectrics in recent years and summarizes the advantages and problems should be resolved in future.

RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices

2019 ◽  
Vol 19 (1) ◽  
pp. 175-181 ◽  
Author(s):  
G. C. Deepak ◽  
Navakanta Bhat
Keyword(s):  
Thin Films ◽  
Gate Dielectrics ◽  
Mos Devices ◽  
High K

ALD (HfO2)x(Al2O3)1−x high-k gate dielectrics for advanced MOS devices application

2004 ◽  
Vol 462-463 ◽  
pp. 110-113 ◽  
Author(s):  
H.Y. Yu ◽  
M.F. Li ◽  
D.L. Kwong
Keyword(s):  
Gate Dielectrics ◽  
Mos Devices ◽  
High K
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