RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices

2019 ◽  
Vol 19 (1) ◽  
pp. 175-181 ◽  
Author(s):  
G. C. Deepak ◽  
Navakanta Bhat
Keyword(s):  
Thin Films ◽  
Gate Dielectrics ◽  
Mos Devices ◽  
High K

Methods to Improve Properties of Gate Dielectrics in Metal-Oxide-Semiconductor

2012 ◽  
Vol 463-464 ◽  
pp. 1341-1345 ◽  
Author(s):  
Chong Liu ◽  
Xiao Li Fan
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Dielectric Materials ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Physical Limitation ◽  
Low Leakage ◽  
Mos Devices ◽  
Low Leakage Current ◽  
High K

This essay aims to introduce development of gate dielectrics. In present-day society, Si-based MOS has met its physical limitation. Scientists are trying to find a better material to reduce the thickness and dimension of MOS devices. While substrate materials are required to have a higher mobility, gate dielectrics are expected to have high k, low Dit and low leakage current. I conclude dielectrics in both Si-based and Ge-based MOS devices and several measures to improve the properties of these gate dielectric materials. I also introduce studies on process in our group and some achievements we have got. Significantly, this essay points out the special interest in rare-earth oxides functioning as gate dielectrics in recent years and summarizes the advantages and problems should be resolved in future.

Characterization of High-k Al2O3 Gate Dielectrics Prepared by Oxidation of Aluminum Thin Films

2019 ◽  
Vol 23 (1) ◽  
pp. 11-17
Author(s):  
Giuliano Gozzi ◽  
Veronica Christiano ◽  
Sthefane A. Da Conceição ◽  
Victor Sonnenberg ◽  
Sebastião G. Dos Santos Filho
Keyword(s):  
Thin Films ◽  
Gate Dielectrics ◽  
High K

scholarly journals Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5395
Author(s):  
Aleksandra Seweryn ◽  
Krystyna Lawniczak-Jablonska ◽  
Piotr Kuzmiuk ◽  
Sylwia Gieraltowska ◽  
Marek Godlewski ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Gate Dielectrics ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Practical Applications ◽  
High K ◽  
Structural And Electrical Properties ◽  
Ozone Precursor ◽  
Insulating Properties

The continuous development of ALD thin films demands ongoing improvements and changes toward fabricating materials with tailored properties that are suitable for different practical applications. Ozone has been recently established as a precursor, with distinct advantages over the alternative oxidizing precursors in the ALDs of advanced dielectric films. This study reports alumina (Al2O3) and hafnia (HfO2) formation using an O3 source and compares the obtained structural and electrical properties. The performed structural examinations of ozone-based materials proved homogenous high-k films with less vacancy levels compared to water-based films. The enhanced structural properties also result in the problematic incorporation of different dopants through the bulk layer. Furthermore, analysis of electrical characteristics of the MIS structures with ALD gate dielectrics demonstrated the improved quality and good insulating properties of ozone-based films. However, further optimization of the ALD technique with ozone is needed as a relatively low relative permittivity characterizes the ultra-thin films.

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