Effects of HCl-H/sub 2/ pre-growth etching on quality of 6H-SiC epitaxial layers

2002 ◽  
Author(s):  
R. Asai
Keyword(s):  
Epitaxial Layers

A Tem study of GaN Grown by ELO on (0001) 6H-SiC

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
B. Beaumont ◽  
P. Gibart ◽  
Y. Melnik
Keyword(s):  
Basal Plane ◽  
Lattice Mismatch ◽  
Early Stage ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
Prismatic Plane ◽  
Vapour Phase Epitaxy ◽  
Hexagonal Shape ◽  
To Come

AbstractThe misfit between GaN and 6H-SiC is 3.5% instead of 16% with sapphire, the epitaxial layers have similar densities of defects on both substrates. Moreover, the lattice mismatch between AlN and 6H-SiC is only 1%. Therefore, epitaxial layer overgrowth (ELO) of GaN on AlN/6H-SiC could be a route to further improve the quality of epitaxial layers. AlN has been grown by Halide Vapour Phase Epitaxy (HVPE) on (0001) 6H-SiC, thereafter a dielectric SiO2 mask was deposited and circular openings were made by standard photolithography and reactive ion etching. We have examined GaN layers at an early stage of coalescence in order to identify which dislocations bend and try to understand why. The analysed islands have always the same hexagonal shape, limited by {0110} facets. The a type dislocations are found to fold many times from basal to the prismatic plane, whereas when a+c dislocations bend to the basal plane, they were not seen to come back to a prismatic one.

Study of Properties of Multicomponent Heterostructures Based on AIIIBV Compounds

2017 ◽  
Vol 265 ◽  
pp. 728-733 ◽  
Author(s):  
M.L. Lunina ◽  
A.E. Kazakova ◽  
D.A. Arustamyan
Keyword(s):  
Temperature Gradient ◽  
Complex Analysis ◽  
Lattice Parameters ◽  
Epitaxial Layers ◽  
Structural Perfection ◽  
Gradient Zone ◽  
Substrate Orientation ◽  
Zone Recrystallization

Complex analysis of the quality of the surface of the multicomponent epitaxial layers AIIIBV compounds grown at the different conditions of temperature gradient zone recrystallization was performed. Main parameters that determine the quality of the surface and structural perfection of multicomponent heterostructures AlInGaPAs / GaAs have been found: the temperature gradient, the composition of the solution-melt, subcooling, matching the lattice parameters and the CTE of the layer and the substrate, the substrate orientation.

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

Effet des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (metal-organic chemical vapor deposition) à basse pression

1991 ◽  
Vol 69 (3-4) ◽  
pp. 412-421 ◽  
Author(s):  
P. Cova ◽  
R. A. Masut ◽  
J. F. Currie ◽  
A. Bensaada ◽  
R. Leonelli ◽  
...  
Keyword(s):  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The development of a low pressure, horizontal MOCVD (metal-organic chemical vapour deposition) reactor has allowed us to study the effect of phosphine and trimethylindium molar fluxes on the epitaxial growth of InP. Study of the growth rate in the temperature range 550–620 °C shows that the growth can be limited by the reaction kinetics at the surface. Epitaxial layers of good morphological quality have been obtained by reducing the rate of growth even if the growth is limited by the reaction kinetics at the surface. The variation of the electronic mobility with the PH3 molar flux reveals the existence of an optimum mobility region, even with a constant V: III ratio. Photoluminescence experiments carried out on the samples show the good crystallographic quality of the epitaxial layers. Spectra taken in the energy range 0.8–1.2 eV show the evolution of two structures at 0.91 and 1.08 eV that we associate with an antisite PIn and a VIn defect, respectively.[Journal translation]

Investigation of MOCVD growth parameters on the quality of GaN epitaxial layers

2011 ◽  
Vol 318 (1) ◽  
pp. 436-440 ◽  
Author(s):  
X.G. Zhang ◽  
B. Soderman ◽  
E. Armour ◽  
A. Paranjpe
Keyword(s):  
Growth Parameters ◽  
Epitaxial Layers ◽  
Mocvd Growth

scholarly journals Thermal conductivity as a metric for the crystalline quality of SrTiO3 epitaxial layers

2011 ◽  
Vol 98 (22) ◽  
pp. 221904 ◽  
Author(s):  
Dong-Wook Oh ◽  
Jayakanth Ravichandran ◽  
Chen-Wei Liang ◽  
Wolter Siemons ◽  
Bharat Jalan ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Crystalline Quality ◽  
Epitaxial Layers
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