scholarly journals The structural quality of AlxGa1−xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy

2009 ◽  
Vol 94 (7) ◽  
pp. 071905 ◽  
Author(s):  
M. E. Hawkridge ◽  
Z. Liliental-Weber ◽  
Hee Jin Kim ◽  
Suk Choi ◽  
Dongwon Yoo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Transmission Electron

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 367-370 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Milena Beshkova ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Temperature Gradient ◽  
Defect Structure ◽  
Temperature Gradients ◽  
Structural Quality ◽  
Fault Density ◽  
Transmission Electron

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

scholarly journals Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers.

2001 ◽  
Vol 693 ◽  
Author(s):  
Z. Liliental-Weber ◽  
J. Jasinski ◽  
D. Cherns ◽  
M. Baines ◽  
R. Davis
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
Cross Section ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Plan View ◽  
Mask Layer ◽  
Transmission Electron ◽  
Different Types

AbstractTransmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3° tilt between wing and seed areas, caused by additional nucleation on the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.

scholarly journals Examination of the Structural Quality of InAsSbBi Epilayers using Cross Section Transmission Electron Microscopy

2018 ◽  
Vol 24 (S1) ◽  
pp. 36-37 ◽  
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Arvind J. Shalindar ◽  
Preston T. Webster ◽  
Shane R. Johnson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Structural Quality ◽  
Transmission Electron

Application and Study of Reactive Polyacrylate Microgel in Pigment Paint of Printed Fabric

2011 ◽  
Vol 311-313 ◽  
pp. 1044-1048
Author(s):  
Hong Long Xing ◽  
Shui Lin Chen
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
Sodium Dodecyl ◽  
Ammonium Persulfate ◽  
Color Fastness ◽  
Adhesive Film ◽  
Transmission Electron ◽  
Divinyl Benzene

Polyacrylate microgel emulsion was prepared by emulsion polymerization using styrene, α-n-butyl acrylate and methyl methacrylate as monomer, polyoxyethylene octylphenol ether (TX-30) and sodium dodecyl sulfate(SDS) as combine emulsifier, divinyl benzene and ammonium persulfate (APS) as initiator，respectively. The prepared microgel was analyzed by a variety of measurment methods, such as Fourier transform infrared spectroscopy and transmission electron microscopy. The effect of microgel on the rheological properties of adhesives, leveling, mechanical properties and pigment printing performance was studied. The rhelogy and the color fastness of the pigment printing binder of printed fabrics were measured by rheometer and friction color fastness test instruments, respectively. At the same time, the mechanical properties of the adhesive film was measured by strength tester. The results show that the thixotropy, leveling and mechanical properties of adhesive printing binder and pringting quality of coating fabrics were improved when the microgel was added.

Cleaning Treatment to Advance the Quality of FIB Samples for Transmission Electron Microscopy

2004 ◽  
Vol 10 (S02) ◽  
pp. 1166-1167
Author(s):  
Wolfgang Gruenewald ◽  
Hans-Juergen Engelmann ◽  
Beate Volkmann
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Cleaning Treatment

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

A method of precise misorientation determination

2003 ◽  
Vol 36 (6) ◽  
pp. 1319-1323 ◽  
Author(s):  
A. Morawiec
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spatial Resolution ◽  
Standard Procedure ◽  
Good Spatial Resolution ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Achievable Accuracy ◽  
Better Than

A method that improves the accuracy of misorientations determined from Kikuchi patterns is described. It is based on the fact that some parameters of a misorientation calculated from two orientations are more accurate than other parameters. A procedure which eliminates inaccurate elements is devised. It requires at least two foil inclinations. The quality of the approach relies on the possibility to set large sample-to-detector distances and the availability of good spatial resolution of transmission electron microscopy. Achievable accuracy is one order of magnitude better than the accuracy of the standard procedure.

Identification of Growth Induced Planar Defects in Silicon

1985 ◽  
Vol 62 ◽  
Author(s):  
H. P. Strunk ◽  
A. Kessler ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Growth ◽  
Epitaxial Layers ◽  
Growth Interface ◽  
Fringe Contrast ◽  
Planar Defects ◽  
Transmission Electron ◽  
Contrast Analysis ◽  
Preferential Incorporation

ABSTRACTPlanar defects have been detected by transmission electron microscopy in silicon epitaxial layers that have been grown from Ga solutions below 500 °C. According to fringe contrast analysis, this defect can be modelled by a plane of Ga atoms within the Si lattice. This plane forms during crystal growth due to local preferential incorporation of Ga atoms at crystallographically defined sites, that occur repetitively in the trains of monomolecular growth steps at the liquid/solid growth interface.

Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Hui Chen ◽  
Guan Wang ◽  
Michael Dudley ◽  
Zhou Xu ◽  
James. H. Edgar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Growth Mechanism ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Choice

ABSTRACTA systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

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