scholarly journals Thermal conductivity as a metric for the crystalline quality of SrTiO3 epitaxial layers

2011 ◽  
Vol 98 (22) ◽  
pp. 221904 ◽  
Author(s):  
Dong-Wook Oh ◽  
Jayakanth Ravichandran ◽  
Chen-Wei Liang ◽  
Wolter Siemons ◽  
Bharat Jalan ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Crystalline Quality ◽  
Epitaxial Layers

The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

1996 ◽  
Vol 449 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Masaya Shimizu ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Mole Fraction ◽  
Vapor Phase ◽  
Growth Stage ◽  
Lattice Mismatch ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
Epitaxial Layers ◽  
Initial Growth ◽  
Initial Growth Stage

ABSTRACTInGaN has been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy (MOVPE) and ‘the composition pulling effect’ at the initial growth stage of InGaN has been studied in relation to the lattice mismatch between InGaN and the bottom epitaxial layers. Crystalline quality of InGaN is good near the interface of InGaN/GaN and the composition of InGaN is close to that of GaN. With increasing growth thickness, the crystalline quality becomes worse and the indium mole fraction is increased. The composition pulling effect becomes stronger with increasing lattice mismatch.

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

2002 ◽  
Vol 389-393 ◽  
pp. 1053-1056 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Toshiyuki Ohno ◽  
Seiji Suzuki ◽  
Junji Senzaki ◽  
Shinsuke Harada ◽  
...  
Keyword(s):  
Crystalline Quality ◽  
Epitaxial Layers ◽  
Channel Mobility ◽  
Inversion Channel

Improved crystalline quality of N-polar GaN epitaxial layers grown with reformed flow-rate-modulation technology

2016 ◽  
Vol 56 (1) ◽  
pp. 015501 ◽  
Author(s):  
Heng Zhang ◽  
Xiong Zhang ◽  
Shuchang Wang ◽  
Xiaolei Wang ◽  
Jianguo Zhao ◽  
...  
Keyword(s):  
Flow Rate ◽  
Crystalline Quality ◽  
Epitaxial Layers ◽  
Rate Modulation

Impact of crystallization manner of the buffer layer on the crystalline quality of GaN epitaxial layers on GaAs (111)A substrate

2005 ◽  
Vol 275 (1-2) ◽  
pp. e1149-e1154 ◽  
Author(s):  
Hisashi Murakami ◽  
Nobuhiko Kawaguchi ◽  
Yoshihiro Kangawa ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
Buffer Layer ◽  
Crystalline Quality ◽  
Epitaxial Layers

Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers

2009 ◽  
Vol 203 (17-18) ◽  
pp. 2625-2627 ◽  
Author(s):  
Nadeemullah A. Mahadik ◽  
Syed B. Qadri ◽  
Siddarth G. Sundaresan ◽  
Mulpuri V. Rao ◽  
Yonglai Tian ◽  
...  
Keyword(s):  
Crystalline Quality ◽  
Epitaxial Layers ◽  
Microwave Annealing ◽  
Ion Implanted

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE

2015 ◽  
Vol 414 ◽  
pp. 15-20 ◽  
Author(s):  
Pornsiri Wanarattikan ◽  
Sakuntam Sanorpim ◽  
Somyod Denchitcharoen ◽  
Kenjiro Uesugi ◽  
Shigeyuki Kuboya ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Crystalline Quality ◽  
Step Growth

Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment

2002 ◽  
Vol 41 (Part 1, No. 6B) ◽  
pp. 4299-4303 ◽  
Author(s):  
Yong Suk Cho ◽  
Junggeun Jhin ◽  
Eui Kwan Koh ◽  
Young Ju Park ◽  
Eun Kyu Kim ◽  
...  
Keyword(s):  
Ion Beam ◽  
Crystalline Quality
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