The Study of Nano/Micro Electron Field Emitters for Field Emission Beam Applications

2016 ◽  
Author(s):  
Wen-Shih Lin ◽  
Chao-Kai Yang ◽  
Tsung-Chieh Cheng
Keyword(s):  
Field Emission ◽  
Field Emitters ◽  
Electron Field ◽  
Emission Beam

Enhanced electron field emission properties from hybrid nanostructures of graphene/Si tip array

RSC Advances ◽  
2015 ◽  
Vol 5 (4) ◽  
pp. 2928-2933 ◽  
Author(s):  
Tinghsun Chang ◽  
Fangwei Lu ◽  
Srinivasu Kunuku ◽  
Kehchyang Leou ◽  
Nyanhwa Tai ◽  
...  
Keyword(s):  
Field Emission ◽  
High Efficiency ◽  
Hybrid Nanostructures ◽  
Monolayer Graphene ◽  
Electron Field Emission ◽  
Field Emission Properties ◽  
Field Emitters ◽  
Electron Field ◽  
Transfer Method ◽  
Electron Field Emission Properties

High efficiency with excellently stable electron field emitters based on monolayer graphene coated on well-aligned Si tip (graphene/SiT) arrays fabricated by a simple transfer method is demonstrated.

Fabrication and Characterization of Carbon Nanotube Field Emitters

2001 ◽  
Vol 706 ◽  
Author(s):  
Jun Jiao ◽  
Lifeng Dong ◽  
David W. Tuggle ◽  
Catherine L. Mosher ◽  
Sean Foxley ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Applied Field ◽  
Field Emission Properties ◽  
Field Emitters ◽  
Current Saturation ◽  
Electron Field ◽  
Emission Behavior ◽  
Tungsten Tip ◽  
Applied Fields

AbstractWe report an effective procedure for fabricating carbon nanotube emitters by directly synthesizing carbon nanotubes on an electrochemically sharpened tungsten tip. The nanotubes adhere very well to the tip of tungsten without any painting materials. Thermal cleaning of the tungsten tip under applied electric field reduced the number of nanotubes formed on the tip resulting in a single nanotube emitter. Electron field emission properties were investigated by employing a field emission microscope with a base pressure ~ 1 × 10-9 Torr. The emission images with respect to the applied field and time were obtained. Different emission images consisting of one to four lobes at different applied fields were observed. The characteristic of the emission current vs. applied voltage was analyzed. Applied potentials up to 3000 V were tested. The estimated field on the emitter was on the order of several tens of volts per nanometer. Our investigation suggests that at lower fields, the I-V characteristic of the nanotube emitter follows Fowler-Nordheim (F-N) emission behavior. At higher applied field, current saturation was observed.

Brightness measurements of nanometer-sized field-emission tips

1993 ◽  
Vol 51 ◽  
pp. 632-633
Author(s):  
M.R. Scheinfein ◽  
W. Qian ◽  
J.C.H. Spence
Keyword(s):  
Field Emission ◽  
Solid Angle ◽  
Source Size ◽  
Quantum Mechanical ◽  
Emission Sources ◽  
Electron Optical System ◽  
Charge Effects ◽  
Field Emitters ◽  
Electron Field ◽  
Acceleration Potential

It has recently been suggested that the brightness of electron field-emitters of atomic dimensions may greatly exceed that of conventional field-emission sources. We have therefore measured the brightness of tungsten nanotip field emitters. Brightness is defined as the current density per unit solid angle at a point for limitingly small angles and areas. The axial brightness, B =∂2I/∂W∂A, when divided by the relativistically corrected acceleration potential V*, the reduced brightness, b=B/V*, is invariant at all points along the axis of a symmetric electron-optical system. For a given emission mechanism, the brightness at a point on a flat source is, by definition, independent of source size. Recently, there have been suggestions that new mechanisms come into play for cold field-emission sources of atomic dimensions, leading perhaps to higher brightness. These include reported departures from Fowler-Nordheim behaviour, and quantum-mechanical focussing effects. The attainment of the theoretical brightness limit is often prevented by space charge effects.

Nitrogen-doped multilayered nanographene derived from Ni3C with efficient electron field emission

2016 ◽  
Vol 4 (39) ◽  
pp. 9251-9260 ◽  
Author(s):  
Dajun Wu ◽  
Chi Zhang ◽  
Shaohui Xu ◽  
Yiping Zhu ◽  
Dayuan Xiong ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Characteristic ◽  
Electron Field Emission ◽  
Characteristic P ◽  
Nitrogen Doped ◽  
Field Emitters ◽  
Field Emission Characteristic ◽  
Strong Adhesion ◽  
Electron Field

Field emitters based on N-doped multilayered nanographene derived from Ni3C films are demonstrated to have strong adhesion to the substrate, and indicating a excellent field emission characteristic.

High-performance flexible electron field emitters fabricated from doped crystalline Si pillar films on polymer substrates

RSC Advances ◽  
2016 ◽  
Vol 6 (80) ◽  
pp. 76325-76335 ◽  
Author(s):  
Ping-Yen Hsieh ◽  
Duc-Dung Nguyen ◽  
Chi-Young Lee ◽  
Nyan-Hwa Tai
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Polymer Substrate ◽  
Polymer Substrates ◽  
Field Emitters ◽  
Electron Field ◽  
Prototype Device

A high-performance flexible Si film-based field emission prototype device using H2 plasma treated B-doped crystalline Si pillar nanostructure as cathode on polymer substrate is proposed.

The Study and Fabrication of Electron Field Emission Module for Next-Generation Multi-Beams Lithography Applications

2013 ◽  
Vol 479-480 ◽  
pp. 264-267
Author(s):  
Wen Shih Lin ◽  
Tao Hsing Chen ◽  
Tsung Chieh Cheng
Keyword(s):  
Field Emission ◽  
Inductively Coupled Plasma ◽  
Simulation Models ◽  
Electron Field Emission ◽  
Uniform Field ◽  
Constant Voltage ◽  
Step Process ◽  
Inductively Coupled ◽  
Field Emitters ◽  
Electron Field

In this paper, a single silicon nanoemitter were investigated by means of experiments and simulation models andthe emitters array was fabricated by dry etching using an inductively coupled plasma (ICP) through a three-step process. Besides, in order to understand the field emission phenomenon in nano/micro scale, a novel experimental measurement technique by SEM with nanomotors including the constant voltage and the constant emission modes was developed to measure the accurate field emission properties.The results indicated that etching method is a good way to make the uniform field emitters and the electron field emission from a single nanoemitter is a barrier tunneling, quantum mechanicalprocess.

Characteristics and Application of Temperature-Field Emitters

1975 ◽  
Vol 33 ◽  
pp. 144-145
Author(s):  
N. Tamura ◽  
T. Goto ◽  
Y. Harada
Keyword(s):  
Temperature Field ◽  
Electron Microscope ◽  
Field Emission ◽  
Resolving Power ◽  
High Brightness ◽  
Field Emitters ◽  
Emission Electron ◽  
Sufficient Stability ◽  
Scanning Electron ◽  
Illuminating System

On account of its high brightness, the field emission electron source has the advantage that it provides the conventional electron microscope with highly coherent illuminating system and that it directly improves the, resolving power of the scanning electron microscope. The present authors have reported some results obtained with a 100 kV field emission electron microscope.It has been proven, furthermore, that the tungsten emitter as a temperature field emission source can be utilized with a sufficient stability under a modest vacuum of 10-8 ~ 10-9 Torr. The present paper is concerned with an extension of our study on the characteristics of the temperature field emitters.

Design of a Field-Emission Gun for the Phillips CM20/STEM microscope

1990 ◽  
Vol 48 (2) ◽  
pp. 100-101
Author(s):  
P.M. Mul ◽  
B.J.M. Bormans ◽  
L. Schaap
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Analytical Electron Microscopy ◽  
Emission Region ◽  
Attractive Alternative ◽  
Electron Holography ◽  
Field Emitter ◽  
Field Emitters ◽  
Resolution Electron ◽  
High Resolution Tem

The first Field Emission Guns (FEG) on TEM/STEM instruments were introduced by Philips in 1977. In the past decade these EM400-series microscopes have been very successful, especially in analytical electron microscopy, where the high currents in small probes are particularly suitable. In High Resolution Electron Holography, the high coherence of the FEG has made it possible to approach atomic resolution.Most of these TEM/STEM systems are based on a cold field emitter (CFE). There are, however, a number of disadvantages to CFE’s, because of their very small emission region: the maximum current is limited (a strong disadvantage for high-resolution TEM imaging) and the emission is unstable, requiring special measures to reduce the strong FEG-induced noise. Thermal field emitters (TFE), i.e. a zirconiated field emitter source operating in the thermal or Schottky mode, have been shown to be a viable and attractive alternative to CFE’s. TFE’s have larger emission regions, providing much higher maximum currents, better stability, and reduced sensitivity to vacuum conditions as well as mechanical and electrical interferences.

Electron Field Emission Characteristics of Silicon Nanodots Formed by the LPCVD Technique

2011 ◽  
Vol 49 (4) ◽  
pp. 342-347
Author(s):  
Kyoungwan Park ◽  
Seungman An ◽  
Taekyung Yim ◽  
Kyungsu Lee ◽  
Jeongho Kim ◽  
...  
Keyword(s):  
Field Emission ◽  
Emission Characteristics ◽  
Electron Field Emission ◽  
Electron Field
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