High-performance flexible electron field emitters fabricated from doped crystalline Si pillar films on polymer substrates

RSC Advances ◽  
2016 ◽  
Vol 6 (80) ◽  
pp. 76325-76335 ◽  
Author(s):  
Ping-Yen Hsieh ◽  
Duc-Dung Nguyen ◽  
Chi-Young Lee ◽  
Nyan-Hwa Tai

A high-performance flexible Si film-based field emission prototype device using H2 plasma treated B-doped crystalline Si pillar nanostructure as cathode on polymer substrate is proposed.

RSC Advances ◽  
2015 ◽  
Vol 5 (4) ◽  
pp. 2928-2933 ◽  
Author(s):  
Tinghsun Chang ◽  
Fangwei Lu ◽  
Srinivasu Kunuku ◽  
Kehchyang Leou ◽  
Nyanhwa Tai ◽  
...  

High efficiency with excellently stable electron field emitters based on monolayer graphene coated on well-aligned Si tip (graphene/SiT) arrays fabricated by a simple transfer method is demonstrated.


Nanoscale ◽  
2015 ◽  
Vol 7 (12) ◽  
pp. 5495-5502 ◽  
Author(s):  
Ho Young Kim ◽  
Sooyeon Jeong ◽  
Seung Yol Jeong ◽  
Kang-Jun Baeg ◽  
Joong Tark Han ◽  
...  

High-performance flexible field emission was demonstrated using chemically doped three-dimensional porous graphene monoliths fabricated by a simple freeze-drying method of a highly concentrated graphene/polymer paste containing dopants.


2012 ◽  
Vol 22 (43) ◽  
pp. 22922 ◽  
Author(s):  
Rami Reddy Devarapalli ◽  
Deodatta R. Shinde ◽  
Fatiha Barka-Bouaifel ◽  
Sandeep G. Yenchalwar ◽  
Rabah Boukherroub ◽  
...  

2001 ◽  
Vol 706 ◽  
Author(s):  
Jun Jiao ◽  
Lifeng Dong ◽  
David W. Tuggle ◽  
Catherine L. Mosher ◽  
Sean Foxley ◽  
...  

AbstractWe report an effective procedure for fabricating carbon nanotube emitters by directly synthesizing carbon nanotubes on an electrochemically sharpened tungsten tip. The nanotubes adhere very well to the tip of tungsten without any painting materials. Thermal cleaning of the tungsten tip under applied electric field reduced the number of nanotubes formed on the tip resulting in a single nanotube emitter. Electron field emission properties were investigated by employing a field emission microscope with a base pressure ~ 1 × 10-9 Torr. The emission images with respect to the applied field and time were obtained. Different emission images consisting of one to four lobes at different applied fields were observed. The characteristic of the emission current vs. applied voltage was analyzed. Applied potentials up to 3000 V were tested. The estimated field on the emitter was on the order of several tens of volts per nanometer. Our investigation suggests that at lower fields, the I-V characteristic of the nanotube emitter follows Fowler-Nordheim (F-N) emission behavior. At higher applied field, current saturation was observed.


2013 ◽  
Vol 103 (7) ◽  
pp. 073112 ◽  
Author(s):  
Yenan Song ◽  
Dong Hoon Shin ◽  
Yoon-Ho Song ◽  
Yahachi Saito ◽  
Cheol Jin Lee

2017 ◽  
Vol 9 (5) ◽  
pp. 4916-4925 ◽  
Author(s):  
Adhimoorthy Saravanan ◽  
Bohr-Ran Huang ◽  
Divinah Manoharan ◽  
I-Nan Lin

2017 ◽  
Vol 9 (2) ◽  
pp. 1562-1568 ◽  
Author(s):  
Ki Nam Yun ◽  
Yuning Sun ◽  
Jun Soo Han ◽  
Yoon-Ho Song ◽  
Cheol Jin Lee

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