Heterogeneous Integration of III-V Photodetectors and Laser Diodes on Silicon-on-Insulator Waveguide Circuits

2006 ◽  
Author(s):  
G. Roelkens ◽  
J. Brouckaert ◽  
S. Verstuyft ◽  
J. Schrauwen ◽  
D. Van Thourhout ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Silicon On Insulator ◽  
Heterogeneous Integration

Heterogeneous Integration of a 300-mm Silicon Photonics-CMOS Wafer Stack by Direct Oxide Bonding and Via-Last 3-D Interconnection

2016 ◽  
Vol 13 (2) ◽  
pp. 71-76 ◽  
Author(s):  
Colin McDonough ◽  
Doug La Tulipe ◽  
Dan Pascual ◽  
Paul Tariello ◽  
John Mucci ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Heterogeneous Integration ◽  
Production Environment ◽  
Si Photonics ◽  
Electrical Connections ◽  
First Time ◽  
Low Capacitance

A fully functional Si photonics and 65-nm complementary metal-oxide semiconductor (CMOS) heterogeneous three-dimensional (3-D) integration is demonstrated for the first time in a 300-mm production environment. Direct oxide wafer bonding was developed to eliminate voids between silicon on insulator photonics and bulk Si CMOS wafers. A via-last, Cu through-oxide via 3-D integration was developed for low capacitance electrical connections with no impact on the CMOS performance. The 3-D yield approaching 100% was demonstrated on >20,000 via chains.

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

2008 ◽  
Vol 104 (3) ◽  
pp. 033117 ◽  
Author(s):  
G. Roelkens ◽  
L. Liu ◽  
D. Van Thourhout ◽  
R. Baets ◽  
R. Nötzel ◽  
...  
Keyword(s):  
Light Emission ◽  
Silicon On Insulator ◽  
Heterogeneous Integration

scholarly journals Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

2011 ◽  
Vol 23 (23) ◽  
pp. 1760-1762 ◽  
Author(s):  
Nannicha Hattasan ◽  
Alban Gassenq ◽  
Laurent Cerutti ◽  
Jean-Baptiste Rodriguez ◽  
Eric Tournie ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Heterogeneous Integration

scholarly journals Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 055323 ◽  
Author(s):  
Runchun Zhang ◽  
Beiji Zhao ◽  
Kai Huang ◽  
Tiangui You ◽  
Qi Jia ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Heterogeneous Integration ◽  
Gan On Si

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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