scholarly journals Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 055323 ◽  
Author(s):  
Runchun Zhang ◽  
Beiji Zhao ◽  
Kai Huang ◽  
Tiangui You ◽  
Qi Jia ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Heterogeneous Integration ◽  
Gan On Si

Heterogeneous Integration of a 300-mm Silicon Photonics-CMOS Wafer Stack by Direct Oxide Bonding and Via-Last 3-D Interconnection

2016 ◽  
Vol 13 (2) ◽  
pp. 71-76 ◽  
Author(s):  
Colin McDonough ◽  
Doug La Tulipe ◽  
Dan Pascual ◽  
Paul Tariello ◽  
John Mucci ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Heterogeneous Integration ◽  
Production Environment ◽  
Si Photonics ◽  
Electrical Connections ◽  
First Time ◽  
Low Capacitance

A fully functional Si photonics and 65-nm complementary metal-oxide semiconductor (CMOS) heterogeneous three-dimensional (3-D) integration is demonstrated for the first time in a 300-mm production environment. Direct oxide wafer bonding was developed to eliminate voids between silicon on insulator photonics and bulk Si CMOS wafers. A via-last, Cu through-oxide via 3-D integration was developed for low capacitance electrical connections with no impact on the CMOS performance. The 3-D yield approaching 100% was demonstrated on >20,000 via chains.

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

2008 ◽  
Vol 104 (3) ◽  
pp. 033117 ◽  
Author(s):  
G. Roelkens ◽  
L. Liu ◽  
D. Van Thourhout ◽  
R. Baets ◽  
R. Nötzel ◽  
...  
Keyword(s):  
Light Emission ◽  
Silicon On Insulator ◽  
Heterogeneous Integration

scholarly journals Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

2011 ◽  
Vol 23 (23) ◽  
pp. 1760-1762 ◽  
Author(s):  
Nannicha Hattasan ◽  
Alban Gassenq ◽  
Laurent Cerutti ◽  
Jean-Baptiste Rodriguez ◽  
Eric Tournie ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Heterogeneous Integration

scholarly journals Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1159
Author(s):  
Lung-Hsing Hsu ◽  
Yung-Yu Lai ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
High Frequency ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Current Status ◽  
Electronic Systems ◽  
Gan Hemt ◽  
Direct Growth ◽  
Engineered Substrates ◽  
Gan On Si ◽  
The Cost

GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

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