Temperature-Dependent Carrier Recombination Processes in Nanocrystalline Si/SiO2 Multi-Layers Studied by Time-Resolved and Time-Integrated Photoluminescence

2006 ◽  
Author(s):  
Suk-Ho Choi ◽  
Sung Kim ◽  
Yong Min Park ◽  
Kyung Joong Kim
Keyword(s):  
Temperature Dependent ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Recombination Processes ◽  
Nanocrystalline Si

scholarly journals Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Nanoscale ◽  
2019 ◽  
Vol 11 (40) ◽  
pp. 18550-18558 ◽  
Author(s):  
Xiaojun Su ◽  
Xulu Zeng ◽  
Hynek Němec ◽  
Xianshao Zou ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Hydrogen Chloride ◽  
Charge Recombination ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Carrier Recombination ◽  
Recombination Processes

The effect of hydrogen chloride etching on charge recombination processes of indium phosphide nanowires was studied by means of time-resolved spectroscopy.

Charge Carrier Recombination in AlGaAs Studied by Time-Resolved Microwave Conductivity Experiments

1989 ◽  
Vol 145 ◽  
Author(s):  
A. Werner ◽  
A. M. Agarwal ◽  
T. D. Moustakas ◽  
M. Kunst
Keyword(s):  
Molecular Beam ◽  
Composition Range ◽  
Defect States ◽  
Decay Kinetics ◽  
Time Resolved ◽  
Effective Electron ◽  
Carrier Recombination ◽  
Transient Photoconductivity ◽  
Recombination Processes ◽  
Charge Carrier Recombination

AbstractAlxGa1-xAs films, doped with silicon in the 1 x 1018 cm-3 range, have been prepared in the composition range x = 0.20 - 0.46 by molecular beam epitaxy. The influence of defect states on excess carrier trapping and recombination processes is studied by a contactless transient photoconductivity technique in the microwave region. Effective electron life- times in the 1 x 10-5s range for the 20% Al film down to the 1 x 10-7s range for the 46% Al film were found, indicating a larger density of electron traps in more Al rich films. The decay kinetics in AlGaAs is compared with the decay kinetics in GaAs.

scholarly journals Exciton dynamics in monolayer graphene grown on a Cu(111) surface

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Youngsin Park ◽  
Guanhua Ying ◽  
Robert A. Taylor ◽  
Chan C. Hwang
Keyword(s):  
Auger Recombination ◽  
Intensity Variation ◽  
Monolayer Graphene ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Excitonic Emission ◽  
Two Peaks ◽  
Time Resolved Photoluminescence ◽  
Opposing Trend

AbstractWe have characterized the carrier dynamics of the excitonic emission emerging from a monolayer of graphene grown on a Cu(111) surface. Excitonic emission from the graphene, with strong and sharp peaks both with a full-width at half-maximum of 2.7 meV, was observed near ~3.16 and ~3.18 eV at 4.2 K. The carrier recombination parameters were studied by measuring both temperature-dependent and time-resolved photoluminescence. The intensity variation with temperature of these two peaks shows an opposing trend. The time-resolved emission was modelled using coupled differential equations and the decay time was found to be dominated by carrier trapping and Auger recombination as the temperature increased.

Temperature Dependent Kinetics of the OH/HO2/O3Chain Reaction by Time-Resolved IR Laser Absorption Spectroscopy

2000 ◽  
Vol 104 (17) ◽  
pp. 3964-3973 ◽  
Author(s):  
Sergey A. Nizkorodov ◽  
Warren W. Harper ◽  
Bradley W. Blackmon ◽  
David J. Nesbitt
Keyword(s):  
Absorption Spectroscopy ◽  
Laser Absorption Spectroscopy ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Laser Absorption ◽  
Ir Laser ◽  
Kinetics Of

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

scholarly journals Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications

2016 ◽  
Vol 24 (23) ◽  
pp. 26363 ◽  
Author(s):  
Stefano Dominici ◽  
Hanqing Wen ◽  
Francesco Bertazzi ◽  
Michele Goano ◽  
Enrico Bellotti
Keyword(s):  
Numerical Study ◽  
Carrier Recombination ◽  
Recombination Processes ◽  
Optoelectronic Applications ◽  
Gesn Alloy
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