scholarly journals Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Nanoscale ◽  
2019 ◽  
Vol 11 (40) ◽  
pp. 18550-18558 ◽  
Author(s):  
Xiaojun Su ◽  
Xulu Zeng ◽  
Hynek Němec ◽  
Xianshao Zou ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Hydrogen Chloride ◽  
Charge Recombination ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Carrier Recombination ◽  
Recombination Processes

The effect of hydrogen chloride etching on charge recombination processes of indium phosphide nanowires was studied by means of time-resolved spectroscopy.

scholarly journals Charge recombination processes in minerals studied using optically stimulated luminescence and time-resolved exo-electrons

2010 ◽  
Vol 43 (32) ◽  
pp. 325502 ◽  
Author(s):  
Sumiko Tsukamoto ◽  
Andrew Murray ◽  
Christina Ankjærgaard ◽  
Mayank Jain ◽  
Torben Lapp
Keyword(s):  
Charge Recombination ◽  
Optically Stimulated Luminescence ◽  
Time Resolved ◽  
Recombination Processes

Charge Carrier Recombination in AlGaAs Studied by Time-Resolved Microwave Conductivity Experiments

1989 ◽  
Vol 145 ◽  
Author(s):  
A. Werner ◽  
A. M. Agarwal ◽  
T. D. Moustakas ◽  
M. Kunst
Keyword(s):  
Molecular Beam ◽  
Composition Range ◽  
Defect States ◽  
Decay Kinetics ◽  
Time Resolved ◽  
Effective Electron ◽  
Carrier Recombination ◽  
Transient Photoconductivity ◽  
Recombination Processes ◽  
Charge Carrier Recombination

AbstractAlxGa1-xAs films, doped with silicon in the 1 x 1018 cm-3 range, have been prepared in the composition range x = 0.20 - 0.46 by molecular beam epitaxy. The influence of defect states on excess carrier trapping and recombination processes is studied by a contactless transient photoconductivity technique in the microwave region. Effective electron life- times in the 1 x 10-5s range for the 20% Al film down to the 1 x 10-7s range for the 46% Al film were found, indicating a larger density of electron traps in more Al rich films. The decay kinetics in AlGaAs is compared with the decay kinetics in GaAs.

Carrier Recombination Processes in Gallium Indium Phosphide Nanowires

Nano Letters ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 4248-4254 ◽  
Author(s):  
Wei Zhang ◽  
Xulu Zeng ◽  
Xiaojun Su ◽  
Xianshao Zou ◽  
Pierre-Adrien Mante ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Gallium Indium Phosphide ◽  
Carrier Recombination ◽  
Recombination Processes
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