KTN ferroelectric thin-films: Application to the realization of tunable microwave devices

2006 ◽  
Author(s):  
Vincent Laur ◽  
Arnaud Moussavou ◽  
Anthony Rousseau ◽  
Gerard Tanne ◽  
Paul Laurent ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Microwave Devices ◽  
Tunable Microwave

HTS/ferroelectric thin films for tunable microwave components

1995 ◽  
Vol 5 (2) ◽  
pp. 3191-3194 ◽  
Author(s):  
F.A. Miranda ◽  
C.H. Mueller ◽  
C.D. Cubbage ◽  
K.B. Bhasin ◽  
R.K. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Microwave Components ◽  
Tunable Microwave

Ba x Sr 1 − x TiO 3 Thin Films for Tunable Microwave Devices in Cryogenic and Room Temperature Application

2008 ◽  
Vol 367 (1) ◽  
pp. 170-178 ◽  
Author(s):  
P. M. Suherman ◽  
H. T. Su ◽  
T. J. Jackson ◽  
F. Huang ◽  
M. J. Lancaster
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Microwave Devices ◽  
Tunable Microwave ◽  
Temperature Application

scholarly journals K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

2018 ◽  
Vol 53 (18) ◽  
pp. 13042-13052 ◽  
Author(s):  
B. Aspe ◽  
F. Cissé ◽  
X. Castel ◽  
V. Demange ◽  
S. Députier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Microwave Devices ◽  
Tunable Microwave

Processing and Properties of Ba0.5Sr0.5TiO3/Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3Sandwich Thin Films for Tunable Microwave Devices

2010 ◽  
Vol 406 (1) ◽  
pp. 3-9 ◽  
Author(s):  
Xin Yan ◽  
Wei Ren ◽  
Peng Shi ◽  
Xiaoqing Wu ◽  
Xiaofeng Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Microwave Devices ◽  
Tunable Microwave

Characterization of doped BST thin films deposited by sol-gel for tunable microwave devices

2010 ◽  
Vol 57 (5) ◽  
pp. 1029-1033 ◽  
Author(s):  
Abderrazek Khalfallaoui ◽  
Gabriel Velu ◽  
Ludovic Burgnies ◽  
Jean-Claude Carru
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Microwave Devices ◽  
Bst Thin Films ◽  
Tunable Microwave

Processing and Characterization of Pure and Doped Ba0.6Sr0.4TiO3 Thin Films for Tunable Microwave Applications

2000 ◽  
Vol 656 ◽  
Author(s):  
P. C. Joshi ◽  
M. W. Cole ◽  
E. Ngo ◽  
C. W. Hubbard
Keyword(s):  
Thin Films ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Microwave Devices ◽  
Silicon Substrates ◽  
Electrical Measurements ◽  
Bst Thin Films ◽  
Tunable Microwave ◽  
Current Characteristics ◽  
And Control

ABSTRACTBa1−xSrxTiO3 thin films are being developed for high-density DRAM devices. The nonlinearity of its dielectric properties with respect to applied dc voltage makes it attractive for tunable microwave devices. For successful integration into microwave devices, extremely reliable Ba1−xSrxTiO3 thin films with enhanced dielectric and insulating properties are desired. Properties of Ba1−xSrxTiO3are typically varied by changing the Ba/Sr ratio and/or doping. In this paper, we reports on the effects of acceptor and donor doping on the microstructural and electrical properties of Ba0.6Sr0.4TiO3 (BST) thin films deposited by metalorganic solution deposition technique on platinum coated silicon substrates. The effects of doping on structure, dielectric permittivity, dielectric loss tangent, and leakage current have been analyzed. The structure of the films was analyzed by x-ray diffraction (XRD). The surface morphology of the films was examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on MIM capacitors using Pt as the top and bottom electrode. It was possible to significantly improve the dielectric loss and leakage current characteristics, and control the dielectric tunability by doping the BST thin films.

Evaluation of Ferroelectric BaxSr1−xTiO3 Thin Films Driven by Phase Shifters for Reflectarray Applications

2000 ◽  
Vol 656 ◽  
Author(s):  
F. A. Miranda ◽  
C. H. Mueller ◽  
F. W. Van Keuls ◽  
R. R. Romanofsky
Keyword(s):  
Thin Films ◽  
Phase Shifters ◽  
Ferroelectric Thin Films ◽  
Performance Criteria ◽  
Evaluation Methodology ◽  
X Ray Diffraction ◽  
Subsequent Performance ◽  
Microwave Components ◽  
Tunable Microwave ◽  
Rf Performance

ABSTRACTThe application of ferroelectric thin films for the development of frequency and phase agile microwave components has been the reason behind very encouraging demonstrations of tunable microwave devices in recent years. Thus, one could conclude with basically a general consensus, that the question of the suitability of thin film ferroelectric technology for the fabrication of superior tunable microwave components has been already answered in a favorable way. However, what is still pending in regards to the validation of this technology is the development of evaluation methodologies to set forth the standards for the material quality and subsequent performance criteria of specific components and devices based on this technology. In this paper we discuss the evaluation methodology under implementation at NASA Glenn Research Center aimed at identifying and optimizing the most relevant parameters of BaxSr1−xTiO3 (BSTO) ferroelectric thin films (i.e., tunability, losses, thickness, crystalline quality, etc.) as defined by a specific microwave application (in our case, phase shifters for reflectarray antennas). Results of our material analysis based on X-ray diffraction and ellipsometry, and how these properties correlate with RF performance for a targeted circuit, will be presented.

Sign in / Sign up

Export Citation Format

Share Document