Evaluation of Ferroelectric BaxSr1−xTiO3 Thin Films Driven by Phase Shifters for Reflectarray Applications

2000 ◽  
Vol 656 ◽  
Author(s):  
F. A. Miranda ◽  
C. H. Mueller ◽  
F. W. Van Keuls ◽  
R. R. Romanofsky
Keyword(s):  
Thin Films ◽  
Phase Shifters ◽  
Ferroelectric Thin Films ◽  
Performance Criteria ◽  
Evaluation Methodology ◽  
X Ray Diffraction ◽  
Subsequent Performance ◽  
Microwave Components ◽  
Tunable Microwave ◽  
Rf Performance

ABSTRACTThe application of ferroelectric thin films for the development of frequency and phase agile microwave components has been the reason behind very encouraging demonstrations of tunable microwave devices in recent years. Thus, one could conclude with basically a general consensus, that the question of the suitability of thin film ferroelectric technology for the fabrication of superior tunable microwave components has been already answered in a favorable way. However, what is still pending in regards to the validation of this technology is the development of evaluation methodologies to set forth the standards for the material quality and subsequent performance criteria of specific components and devices based on this technology. In this paper we discuss the evaluation methodology under implementation at NASA Glenn Research Center aimed at identifying and optimizing the most relevant parameters of BaxSr1−xTiO3 (BSTO) ferroelectric thin films (i.e., tunability, losses, thickness, crystalline quality, etc.) as defined by a specific microwave application (in our case, phase shifters for reflectarray antennas). Results of our material analysis based on X-ray diffraction and ellipsometry, and how these properties correlate with RF performance for a targeted circuit, will be presented.

HTS/ferroelectric thin films for tunable microwave components

1995 ◽  
Vol 5 (2) ◽  
pp. 3191-3194 ◽  
Author(s):  
F.A. Miranda ◽  
C.H. Mueller ◽  
C.D. Cubbage ◽  
K.B. Bhasin ◽  
R.K. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Microwave Components ◽  
Tunable Microwave

PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION

2009 ◽  
Vol 16 (06) ◽  
pp. 869-873 ◽  
Author(s):  
GUANGHUI XU ◽  
XIANGYANG JING ◽  
YIN ZHANG ◽  
BAIBIAO HUANG
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Decomposition Method ◽  
Dielectric Constants ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ce Modification ◽  
P Type

( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films have been successfully prepared on P-type Si (100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi 2 Ti 2 O 7 was improved after Ce ions were doped. The dielectric constants of ( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films annealed at 650° and 700°C were higher than that of Bi 2 Ti 2 O 7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C – V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films had potential for DRAM and MOS applications.

Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

1991 ◽  
Vol 243 ◽  
Author(s):  
H. Wang ◽  
L. W. Fu ◽  
S. X. Shang ◽  
S. Q. Yu ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Dispersion Analysis ◽  
Ferroelectric Thin Films ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Technique

AbstractThe ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

Coplanar Phase Shifters Based on Ferroelectric Thin Films

2007 ◽  
Vol 28 (3) ◽  
pp. 229-235 ◽  
Author(s):  
Chunlin Fu ◽  
Fusheng Pan ◽  
Hongwei Chen ◽  
Shucheng Feng ◽  
Wei Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Shifters ◽  
Ferroelectric Thin Films

A comparative X-ray diffraction study of ferroelectric thin films and superlattices

2017 ◽  
Vol 508 (1) ◽  
pp. 138-143 ◽  
Author(s):  
Yu. A. Tikhonov ◽  
I. N. Zakharchenko ◽  
A. G. Razumnaya ◽  
Y. I. Yuzyuk ◽  
Sh. Pavunny ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Ferroelectric Thin Films ◽  
X Ray Diffraction ◽  
X Ray

In situ x-ray diffraction of solution-derived ferroelectric thin films for quantitative phase and texture evolution measurement

2012 ◽  
Vol 112 (10) ◽  
pp. 104109 ◽  
Author(s):  
Krishna Nittala ◽  
Sungwook Mhin ◽  
Jacob L. Jones ◽  
Douglas S. Robinson ◽  
Jon F. Ihlefeld ◽  
...  
Keyword(s):  
Thin Films ◽  
Texture Evolution ◽  
Ferroelectric Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantitative Phase

Electrical Characteristics in Transparent (Bi3.25Nd0.75)(Ti2.9V0.1)O12 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 777-780
Author(s):  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

In this study, we investigated the structure and ferroelectric properties of the as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12ferroelectric thin films on ITO substrate fabricated by rf magnetron sputtering method. The electrical, ferroelectric and physical characteristics of as-deposited (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films were developed under different conditions to find the optimal deposited parameters. The crystalline structure of the prepared (Bi3.25Nd0.75)(Ti2.9V0.1)O12thin films was analyzed by X-ray diffraction (XRD). Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity. Additionally, the remnant polarization of the as-deposited ferroelectric thin films was improved by neodymium and vanadium elements doped in this study. The remanent polarization of as-deposited ferroelectric thin films was 11 μC/cm2as the measured frequency of 1kHz. Finally, the polarization of as-deposited ferroelectric thin film capacitor was decreased by 9% after the fatigue test with 109switching cycles.

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