Resistive-Open Defect Influence in SRAM Pre-Charge Circuits: Analysis and Characterization

2005 ◽  
Author(s):  
L. Dilillo ◽  
P. Girard ◽  
S. Pravossoudovitch ◽  
A. Virazel
Keyword(s):  
Open Defect

The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC

1997 ◽  
Author(s):  
X. Yang ◽  
X. Song
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
New Product ◽  
Defect Analysis ◽  
Transmission Electron ◽  
Contrast Technique ◽  
Defect Mechanism ◽  
Open Defect ◽  
Voltage Contrast

Abstract Novel Focused Ion Beam (FIB) voltage-contrast technique combined with TEM has been used in this study to identify a certain subtle defect mechanism that caused reliability stress failures of a new product. The suspected defect was first isolated to a unique via along the row through electrical testing and layout analysis. Static voltage contrast of FIB cross-section was used to confirm the suspected open defect at the via. Precision Transmission Electron Microscope (TEM) was then used to reveal the detail of the defect. Based on the result, proper process changes were implemented. The failure mode was successfully eliminated and the reliability of the product was greatly improved.

Through-Silicon-Via resistive-open defect analysis

2012 ◽  
Author(s):  
C. Metzler ◽  
A. Todri ◽  
A. Bosio ◽  
L. Dilillo ◽  
P. Girard ◽  
...  
Keyword(s):  
Defect Analysis ◽  
Through Silicon Via ◽  
Open Defect
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