Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs

2006 ◽  
Author(s):  
Gianluca Fiori ◽  
Giuseppe Iannaccone
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Impurity Scattering ◽  
Limited Mobility

THRESHOLD AND SATURATION VOLTAGES MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT-FETs)

NANO ◽  
2008 ◽  
Vol 03 (03) ◽  
pp. 195-201 ◽  
Author(s):  
JOSE M. MARULANDA ◽  
ASHOK SRIVASTAVA ◽  
ASHWANI K. SHARMA
Keyword(s):  
Carbon Nanotube ◽  
Analytical Model ◽  
Threshold Voltage ◽  
Field Effect ◽  
Close Agreement ◽  
Field Effect Transistors ◽  
Graphical Modeling ◽  
Chiral Vector ◽  
Modeling Techniques ◽  
Model Equations

We present analytical model equations for threshold voltage (Vth) and saturation voltage (Vds,sat) characterizing CNT-FETs. These model equations have been obtained from the charge and potential distributions between the gate and substrate in a CNT-FET. It is shown that both Vth and Vds,sat are strongly dependent on chiral vectors of CNTs. The results show close agreement between theoretical and graphical modeling techniques. It is also shown that the calculated Vth of a CNT-FET with chiral vector (3, 1) is in close agreement with the corresponding published work.

Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

2018 ◽  
Vol 112 (15) ◽  
pp. 153109 ◽  
Author(s):  
Donglai Zhong ◽  
Chenyi Zhao ◽  
Lijun Liu ◽  
Zhiyong Zhang ◽  
Lian-Mao Peng
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Engineering

Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage

Nano Letters ◽  
2008 ◽  
Vol 8 (11) ◽  
pp. 3696-3701 ◽  
Author(s):  
Zhiyong Zhang ◽  
Sheng Wang ◽  
Li Ding ◽  
Xuelei Liang ◽  
Tian Pei ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Band Engineering of Partially Exposed Carbon Nanotube Field-Effect Transistors

2004 ◽  
Vol 858 ◽  
Author(s):  
Xiaolei Liu ◽  
Zhicheng Luo ◽  
Song Han ◽  
Tao Tang ◽  
Daihua Zhang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Good Control ◽  
Subthreshold Swing ◽  
New Approach ◽  
Band Engineering ◽  
Chemical Gating ◽  
Reducing Gases

ABSTRACTWe present a new approach to engineer the band structure of carbon nanotube field-effect transistors via selected area chemical gating. By exposing the center part or the contacts of the nanotube devices to oxidizing or reducing gases, a good control over the threshold voltage and subthreshold swing has been achieved. Our experiments reveal that NO2 shifts the threshold voltage higher while NH3 shifts it lower for both center-exposed and contact-exposed devices. However, modulations to the subthreshold swing are in opposite directions for center-exposed and contact-exposed devices: NO2 lowers the subthreshold swing of the contact-exposed devices, but increases that of the center-exposed devices; In contrast, NH3 reduces the subthreshold swing of the center-exposed devices, but increases that of the contact-exposed devices. A model has been developed based on Langmuir isotherm, and the experimental results can be well explained.

Origins and Characteristics of the Threshold Voltage Variability of Quasiballistic Single-Walled Carbon Nanotube Field-Effect Transistors

ACS Nano ◽  
2015 ◽  
Vol 9 (2) ◽  
pp. 1936-1944 ◽  
Author(s):  
Qing Cao ◽  
Shu-jen Han ◽  
Ashish V. Penumatcha ◽  
Martin M. Frank ◽  
George S. Tulevski ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon
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