Link among array non-uniformity, threshold voltage, and subthreshold swing degradation in aligned array carbon nanotube field effect transistors

2020 ◽  
Vol 128 (23) ◽  
pp. 234301
Author(s):  
Sean M. Foradori ◽  
Katherine R. Jinkins ◽  
Michael S. Arnold
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Swing ◽  
Aligned Array

Band Engineering of Partially Exposed Carbon Nanotube Field-Effect Transistors

2004 ◽  
Vol 858 ◽  
Author(s):  
Xiaolei Liu ◽  
Zhicheng Luo ◽  
Song Han ◽  
Tao Tang ◽  
Daihua Zhang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Good Control ◽  
Subthreshold Swing ◽  
New Approach ◽  
Band Engineering ◽  
Chemical Gating ◽  
Reducing Gases

ABSTRACTWe present a new approach to engineer the band structure of carbon nanotube field-effect transistors via selected area chemical gating. By exposing the center part or the contacts of the nanotube devices to oxidizing or reducing gases, a good control over the threshold voltage and subthreshold swing has been achieved. Our experiments reveal that NO2 shifts the threshold voltage higher while NH3 shifts it lower for both center-exposed and contact-exposed devices. However, modulations to the subthreshold swing are in opposite directions for center-exposed and contact-exposed devices: NO2 lowers the subthreshold swing of the contact-exposed devices, but increases that of the center-exposed devices; In contrast, NH3 reduces the subthreshold swing of the center-exposed devices, but increases that of the contact-exposed devices. A model has been developed based on Langmuir isotherm, and the experimental results can be well explained.

THRESHOLD AND SATURATION VOLTAGES MODELING OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNT-FETs)

NANO ◽  
2008 ◽  
Vol 03 (03) ◽  
pp. 195-201 ◽  
Author(s):  
JOSE M. MARULANDA ◽  
ASHOK SRIVASTAVA ◽  
ASHWANI K. SHARMA
Keyword(s):  
Carbon Nanotube ◽  
Analytical Model ◽  
Threshold Voltage ◽  
Field Effect ◽  
Close Agreement ◽  
Field Effect Transistors ◽  
Graphical Modeling ◽  
Chiral Vector ◽  
Modeling Techniques ◽  
Model Equations

We present analytical model equations for threshold voltage (Vth) and saturation voltage (Vds,sat) characterizing CNT-FETs. These model equations have been obtained from the charge and potential distributions between the gate and substrate in a CNT-FET. It is shown that both Vth and Vds,sat are strongly dependent on chiral vectors of CNTs. The results show close agreement between theoretical and graphical modeling techniques. It is also shown that the calculated Vth of a CNT-FET with chiral vector (3, 1) is in close agreement with the corresponding published work.

scholarly journals Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Ali Naderi ◽  
S. Mohammad Noorbakhsh ◽  
Hossein Elahipanah
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Quantum Simulation ◽  
Subthreshold Swing ◽  
Short Channel ◽  
Principal Characteristics ◽  
Channel Effects ◽  
Consistent Solution ◽  
Drain Conductance

By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by employing the self-consistent solution of 2D Poisson-Schrödinger equations within the nonequilibrium Green's function (NEGF) formalism. Principal characteristics of CNTFETs such as current capability, drain conductance, transconductance, and subthreshold swing (SS) have been investigated. Simulation results present that as temperature raises from 250 to 500 K, the drain conductance and on-current of the CNTFET improved; meanwhile the on-/off-current ratio deteriorated due to faster growth in off-current. Also the effects of temperature on short channel effects (SCEs) such as drain-induced barrier lowering (DIBL) and threshold voltage roll-off have been studied. Results show that the subthreshold swing and DIBL parameters are almost linearly correlated, so the degradation of these parameters has the same origin and can be perfectly influenced by the temperature.

Electrostatic Dimension of Aligned-Array Carbon Nanotube Field-Effect Transistors

ACS Nano ◽  
2013 ◽  
Vol 7 (2) ◽  
pp. 1299-1308 ◽  
Author(s):  
Muhammad A. Wahab ◽  
Sung Hun Jin ◽  
Ahmad E. Islam ◽  
Jaeseong Kim ◽  
Ji-hun Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Aligned Array

Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

2018 ◽  
Vol 112 (15) ◽  
pp. 153109 ◽  
Author(s):  
Donglai Zhong ◽  
Chenyi Zhao ◽  
Lijun Liu ◽  
Zhiyong Zhang ◽  
Lian-Mao Peng
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Engineering

Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage

Nano Letters ◽  
2008 ◽  
Vol 8 (11) ◽  
pp. 3696-3701 ◽  
Author(s):  
Zhiyong Zhang ◽  
Sheng Wang ◽  
Li Ding ◽  
Xuelei Liang ◽  
Tian Pei ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Effect of variations in diameter and density on the statistics of aligned array carbon-nanotube field effect transistors

2012 ◽  
Vol 111 (5) ◽  
pp. 054511 ◽  
Author(s):  
Ahmad E. Islam ◽  
Frank Du ◽  
Xinning Ho ◽  
Sung Hun Jin ◽  
Simon Dunham ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Aligned Array

Origins and Characteristics of the Threshold Voltage Variability of Quasiballistic Single-Walled Carbon Nanotube Field-Effect Transistors

ACS Nano ◽  
2015 ◽  
Vol 9 (2) ◽  
pp. 1936-1944 ◽  
Author(s):  
Qing Cao ◽  
Shu-jen Han ◽  
Ashish V. Penumatcha ◽  
Martin M. Frank ◽  
George S. Tulevski ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon
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