Mechanical characterization of wafer level bump-less Cu-Cu bonding

Author(s):  
L. Peng ◽  
L. Zhang ◽  
H. Y. Li ◽  
G. Q. Lo ◽  
C. S. Tan
2018 ◽  
Author(s):  
Devon Jakob ◽  
Le Wang ◽  
Haomin Wang ◽  
Xiaoji Xu

<p>In situ measurements of the chemical compositions and mechanical properties of kerogen help understand the formation, transformation, and utilization of organic matter in the oil shale at the nanoscale. However, the optical diffraction limit prevents attainment of nanoscale resolution using conventional spectroscopy and microscopy. Here, we utilize peak force infrared (PFIR) microscopy for multimodal characterization of kerogen in oil shale. The PFIR provides correlative infrared imaging, mechanical mapping, and broadband infrared spectroscopy capability with 6 nm spatial resolution. We observed nanoscale heterogeneity in the chemical composition, aromaticity, and maturity of the kerogens from oil shales from Eagle Ford shale play in Texas. The kerogen aromaticity positively correlates with the local mechanical moduli of the surrounding inorganic matrix, manifesting the Le Chatelier’s principle. In situ spectro-mechanical characterization of oil shale will yield valuable insight for geochemical and geomechanical modeling on the origin and transformation of kerogen in the oil shale.</p>


2017 ◽  
Vol 5 (3) ◽  
pp. 8
Author(s):  
KUMAR DINESH ◽  
KAUR ARSHDEEP ◽  
AGGARWAL YUGAM KUMAR ◽  
UNIYAL PIYUSH ◽  
KUMAR NAVIN ◽  
...  

Author(s):  
Alexandre Luiz Pereira ◽  
Rafael Oliveira Santos ◽  
DOINA BANEA ◽  
Álisson Lemos

Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.


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