Large Cu wire wedge bonding process for power devices

2011 ◽  
Author(s):  
Jamin Ling ◽  
Tao Xu ◽  
Christoph Luechinger
Keyword(s):  
Bonding Process ◽  
Power Devices ◽  
Wedge Bonding

Thermally Stable Ag-Ag Joints Bonded by Ultrasound-assisted Stress Migration Bonding

2017 ◽  
Vol 2017 (1) ◽  
pp. 000242-000246
Author(s):  
Hao Zhang ◽  
Norio Asatani ◽  
Yukiharu Kimoto ◽  
Aiji Suetake ◽  
Shijo Nagao ◽  
...  
Keyword(s):  
Ultrasonic Pulse ◽  
Bonding Process ◽  
Bonded Joints ◽  
Thermally Stable ◽  
Power Devices ◽  
Ultrasonic Bonding ◽  
High Temperature Storage ◽  
Ultrasound Assisted ◽  
Generation Power ◽  
Temperature Storage

Abstract We introduce a Ag-Ag direct bonding process with the aid of ultrasonic bonding, which uses silver “Nano-volcanic eruption of Ag” caused by stress migration at 250 °C. Various preheating temperatures before the ultrasonic pulse and various sputtering methods such as direct current (DC) and radio frequency (RF) have also been evaluated. A novel bonding process which combines ultrasonic bonding and stress migration bonding (SMB) method is established. The bonding achieved a die-shear strength of more than 50 MPa and a nearly-perfect voidless bonding interface. High temperature storage (HTS) test at 250 °C was used to evaluate the thermal-resist ability of bonded SMB joints. The results indicate that the bonded joints show no obvious changes in the interfacial morphology and the die-shear stress after HTS test for 1000 h is still higher than 30 MPa. The thermally-stable SMB joints can be applied to advanced devices such as thin-wafer multi-chip integrations and next-generation power devices.

Evolution of the bond interface during ultrasonic Al–Si wire wedge bonding process

2007 ◽  
Vol 182 (1-3) ◽  
pp. 202-206 ◽  
Author(s):  
Hongjun Ji ◽  
Mingyu Li ◽  
Chunqing Wang ◽  
Jingwei Guan ◽  
Han Sur Bang
Keyword(s):  
Bonding Process ◽  
Bond Interface ◽  
Wedge Bonding

The ultrasonic wedge/wedge bonding process investigated using in situ real-time amplitudes from laser vibrometer and integrated force sensor

2010 ◽  
Vol 87 (4) ◽  
pp. 537-542 ◽  
Author(s):  
H. Gaul ◽  
A. Shah ◽  
M. Mayer ◽  
Y. Zhou ◽  
M. Schneider-Ramelow ◽  
...  
Keyword(s):  
Real Time ◽  
Force Sensor ◽  
Bonding Process ◽  
Laser Vibrometer ◽  
Wedge Bonding

The reliability of Ag wedge bonding with various bonding pads for power devices

2016 ◽  
Vol 2016 (1) ◽  
pp. 000385-000389
Author(s):  
Xing Wei ◽  
Zhou Yu ◽  
Ge Yan ◽  
Tomonori Iizuka ◽  
Kohei Tatsumi
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
Intelligent Vehicles ◽  
Power Devices ◽  
Bonding Wire ◽  
Parasitic Parameters ◽  
Higher Temperature ◽  
Wedge Bonding ◽  
Device Size ◽  
Temperature Storage

Abstract Recent years, with the development of intelligent vehicles, power devices would be widely used. But traditional Si power devices have problems under high temperature. Now, there is a tendency that using SiC instead of Si in power devices, as SiC has a higher band gap 3.25 eV comparing with 1.12 eV of Si. So that SiC power devices can withstand higher temperature and voltage. Also SiC power devices have the advantages of lower parasitic parameters, smaller device size and shorter response time. In this study, to investigate the reliability of Ag wedge bonding, Ag wires were bonded on Al pad and Au-Ni pad. And then we did shear test after high temperature storage life test (HTSL). Finally, we used energy dispersive X-ray spectroscopy (EDS) to do cross-section observation. The results show that, for Al pad, the shear strength has decreased after annealing at 300°C with mold packages, cracks and corrosion were observed. For Au-Ni pad, the shear strength has increased after annealing, and no cracks or corrosion formed. So Ag bonding wire is proposed as an alternative to Al bonding wire for selected metal pads in power devices.

An Innovative High Thermal Conductive Solderable Adhesive

2011 ◽  
Vol 2011 (1) ◽  
pp. 000852-000856
Author(s):  
Mary Liu ◽  
Wusheng Yin
Keyword(s):  
High Power ◽  
Low Cost ◽  
Bonding Process ◽  
Advanced Materials ◽  
Reflow Process ◽  
Power Devices ◽  
Process Yield ◽  
Thermal Compression ◽  
Soldering Temperature ◽  
Die Attach

With increasing LED development and production, thermal issues are becoming more and more important for LED devices, particularly true for high power LED and also for other high power devices. In order to dissipate the heat from the device efficiently, Au80Sn20 alloy is being used in the industry now. However there are a few drawbacks for Au80Sn20 process: (1) higher soldering temperature, usually higher than 320 °C; (2) low process yield; (3) too expensive. In order to overcome the shortcomings of Au80Sn20 process, YINCAE Advanced Materials, LLC has invented a new solderable adhesive – TM 230. Solderable adhesives are epoxy based silver adhesives. During the die attach reflow process, the solder material on silver can solder silver together, and die with pad together. After soldering, epoxy can encapsulate the soldered interface, so that the thermal conductivity can be as high as 58 W/mk. In comparison to Au80Sn20 reflow process, the solderable adhesive has the following advantages: (1) low process temperature – reflow peak temperature of 230 °C; (2) high process yield – mass reflow process instead of thermal compression bonding process; (3) low cost ownership. In this paper we are going to present the die attach process of solderable adhesive and the reliability test. After 1000 h lighting of LED, it has been found that there is almost no decay in the light intensity by using solderable adhesive – TM 230.

Interface Of Aluminum/Ceramic Power Substrates Manufactured By Casting-Bonding Process

1996 ◽  
Vol 445 ◽  
Author(s):  
X. S. Ning ◽  
Y. Ogawa ◽  
K. Suganuma
Keyword(s):  
Thermal Stress ◽  
Stress Tolerance ◽  
High Reliability ◽  
Bonding Process ◽  
Power Devices ◽  
Power Modules ◽  
Conventional Technology ◽  
Bonding Method ◽  
Perfect Interface

AbstractNew processes for manufacturing Al/ceramic power substrates have been developed. These processes use a casting-bonding method to bond Al plates to the both sides of ceramic plates. The Al plates formed on the substrates are then chemically etched to be a desired shape using the conventional technology, followed by plating nickel on them. The power substrates manufactured by the process have both a perfect interface and an excellent thermal stress tolerance. Hence, these processes are especially suitable for assembling high reliability power devices such as IGBT power modules.

Measurement of Bonding Stress in Silicon High Power Device Structures by Infrared Photoelasticity Method

1999 ◽  
Vol 563 ◽  
Author(s):  
H. J. Peng ◽  
S. P. Wong ◽  
W. F. Lau ◽  
N. Ke ◽  
Shounan Zhao
Keyword(s):  
High Power ◽  
Quantitative Information ◽  
Bonding Process ◽  
Power Device ◽  
Geometrical Parameters ◽  
Interlaminar Stresses ◽  
Si Substrate ◽  
Power Devices ◽  
Si Substrates ◽  
Device Structures

AbstractSilicon high-power devices are commonly bonded to Mo electrodes using Al films. Bonding stress will inevitably be introduced into the Si substrate by such a process. In this work, the infrared (IR) photoelasticity (PE) method was employed to measure the stress distribution in the Si substrates induced by high temperature bonding process of Si/Al/Mo structures commonly used in the production of silicon thyristors. It is demonstrated that quantitative information on both the directions and magnitudes of the stress can be obtained. The dependence of the magnitude of the stress on the geometrical parameters of the structure has also been studied. The experimental results are shown to agree well with the calculated results derived from a theory of interlaminar stresses in composites.

scholarly journals Die Attach of Power Devices Using Silver Sintering – Bonding Process Optimisation and Characterization

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000084-000090 ◽  
Author(s):  
Cyril Buttay ◽  
Amandine Masson ◽  
Jianfeng Li ◽  
Mark Johnson ◽  
Mihai Lazar ◽  
...  
Keyword(s):  
Operating Temperature ◽  
Bonding Process ◽  
Attractive Alternative ◽  
Special Focus ◽  
Process Optimisation ◽  
Melting Points ◽  
Power Devices ◽  
Die Attach ◽  
Silver Sintering ◽  
Soldering Alloys

Silver sintering is becoming an attractive alternative to soldering, especially for high temperature applications. Indeed, the increase in operating temperature requires new soldering alloys with even higher melting points. Silver sintering, on the contrary, is a solution which only require moderate (<300°C) process temperature. In this paper, we present the implementation of a die attach technique based on sintering of some silver paste, with a special focus on the practical considerations. A good quality bond can be achieved by paying attention to the assembly process.

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