In-mole-fraction of InGaAs insertion layers effects on the structural and optical properties of GaSb quantum dots grown on (100) GaAs substrate

2015 ◽  
Author(s):  
Kamonchanok Khoklang ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Suwit Kiravittaya ◽  
Somchai Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Mole Fraction ◽  
Gaas Substrate ◽  
Structural And Optical Properties

scholarly journals In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate

1970 ◽  
Vol 10 (2) ◽  
pp. 129-135
Author(s):  
Suwit Kiravittaya ◽  
Kamonchanok Khoklang ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Indium Content ◽  
Structural And Optical Properties ◽  
Size Change ◽  
Shape And Size

GaSb quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a 4-monolayer (ML) InxGa1-xAs (x = 0.07, 0.15, 0.20, and 0.25) to investigate the effects of In-mole-fraction of InGaAs insertion layers on the structural and optical properties of the GaSb QDs. The density of grown GaSb QDs is approximately 1.2-2.8109 cm−2 on In-GaAs insertion layers which depends on the In-molefraction. Dot shape and size change substantially when In-mole-fraction of InGaAs insertion layers is varied. The uniformity of GaSb QDs improves when the indium content increases. The change in freestanding QD morphology is likely due to the modified strain at different values of indium compositions in InGaAs insertion layers. The effects of In-molefraction of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). PL results show the blueshift of the emission when the indium content in InGaAs insertion layer increases.

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

Structural and optical properties of upconversion CuInS/ZnS quantum dots

2018 ◽  
Vol 86 ◽  
pp. 545-549 ◽  
Author(s):  
Magdy Ali ◽  
Jehan El Nady ◽  
Shaker Ebrahim ◽  
Moataz Soliman
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Structural And Optical Properties

Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots

2007 ◽  
Vol 101 (2) ◽  
pp. 024918 ◽  
Author(s):  
B. Alloing ◽  
C. Zinoni ◽  
L. H. Li ◽  
A. Fiore ◽  
G. Patriarche
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Low Density ◽  
Structural And Optical Properties
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