Advanced Dicing Technologies for Combination of Wafer to Wafer and Collective Die to Wafer Direct Bonding

2019 ◽  
Author(s):  
Fumihiro Inoue ◽  
Alain Phommahaxay ◽  
Arnita Podpod ◽  
Samuel Suhard ◽  
Hitoshi Hoshino ◽  
...  
Keyword(s):  
Wafer Direct Bonding

Chemical Free Room Temperature Wafer To Wafer Direct Bonding

1995 ◽  
Vol 142 (11) ◽  
pp. 3949-3955 ◽  
Author(s):  
Shari N. Farrens ◽  
James R. Dekker ◽  
Jason K. Smith ◽  
Brian E. Roberds
Keyword(s):  
Room Temperature ◽  
Wafer Direct Bonding

A dielectrically isolated photodiode array by silicon-wafer direct bonding

1987 ◽  
Vol 8 (10) ◽  
pp. 454-456 ◽  
Author(s):  
J. Ohura ◽  
T. Tsukakoshi ◽  
K. Fukuda ◽  
M. Shimbo ◽  
H. Ohashi
Keyword(s):  
Silicon Wafer ◽  
Photodiode Array ◽  
Wafer Direct Bonding

SiO2-SiO2 die-to-wafer direct bonding interface weakening

2020 ◽  
Vol 107 ◽  
pp. 113589 ◽  
Author(s):  
Toshiyuki Tabata ◽  
Loic Sanchez ◽  
Vincent Larrey ◽  
Frank Fournel ◽  
Hubert Moriceau
Keyword(s):  
Bonding Interface ◽  
Wafer Direct Bonding

scholarly journals Investigation of Plasma Activated Si-Si Bonded Interface by Infrared Image Based on Combination of Spatial Domain and Morphology

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 445
Author(s):  
Mao Du ◽  
Dongling Li ◽  
Yufei Liu
Keyword(s):  
Infrared Imaging ◽  
Imaging System ◽  
Orthogonal Experiment ◽  
Infrared Image ◽  
Spatial Domain ◽  
Bonded Interface ◽  
Disk Size ◽  
Wafer Direct Bonding ◽  
Binarization Threshold ◽  
Bonding Rate

This paper presents a detection method for characterizing the bonded interface of O2 plasma activated silicon wafer direct bonding. The images, obtained by infrared imaging system, were analyzed by the software based on spatial domain and morphology methods. The spatial domain processing methods, including median filtering and Laplace operator, were applied to achieve de-noising and contrast enhancement. With optimized parameters of sharpening operator patterns, disk size, binarization threshold, morphological parameter A and B, the void contours were clear and convenient for segmentation, and the bonding rate was accurately calculated. Furthermore, the void characteristics with different sizes and distributions were also analyzed, and the detailed statistics of the void’s number and size are given. Moreover, the orthogonal experiment was designed and analyzed, indicating that O2 flow has the greatest influence on the bonding rate in comparison with activated time and power. With the optimized process parameters of activated power of 150 W, O2 flow of 100 sccm and time of 120 s, the testing results show that the bonding rate can reach 94.51% and the bonding strength is 12.32 MPa.

scholarly journals Preparation of the Low Cost SiC Wafer by the Layer Splitting Method and the Wafer Direct Bonding Method

2017 ◽  
Vol 83 (9) ◽  
pp. 833-836
Author(s):  
Takamitsu KAWAHARA ◽  
Naoki HATTA ◽  
Toyokazu SAKATA ◽  
Akiyuki MINAMI ◽  
Kuniaki YAGI ◽  
...  
Keyword(s):  
Low Cost ◽  
Splitting Method ◽  
Bonding Method ◽  
Wafer Direct Bonding ◽  
Sic Wafer

Low-temperature wafer direct bonding of silicon and quartz glass by a two-step wet chemical surface cleaning

2017 ◽  
Vol 57 (2S1) ◽  
pp. 02BD02 ◽  
Author(s):  
Chenxi Wang ◽  
Jikai Xu ◽  
Xiaorun Zeng ◽  
Yanhong Tian ◽  
Chunqing Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quartz Glass ◽  
Surface Cleaning ◽  
Chemical Surface ◽  
Wet Chemical ◽  
Wafer Direct Bonding
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