Accurate Electrical Modeling of Through Silicon Via with Minority Carrier Redistribution Effect

2018 ◽  
Author(s):  
Huan Liu ◽  
Runiu Fang ◽  
Xin Sun ◽  
Min Miao ◽  
Yufeng Jin
Keyword(s):  
Minority Carrier ◽  
Through Silicon Via ◽  
Electrical Modeling ◽  
Carrier Redistribution ◽  
Redistribution Effect

scholarly journals Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

2010 ◽  
Vol 57 (1) ◽  
pp. 256-262 ◽  
Author(s):  
Guruprasad Katti ◽  
Michele Stucchi ◽  
Kristin De Meyer ◽  
Wim Dehaene
Keyword(s):  
Three Dimensional ◽  
Through Silicon Via ◽  
Electrical Modeling

Electrical Modeling and Analysis of Differential Dielectric-Cavity Through-Silicon via Array

2017 ◽  
Vol 27 (7) ◽  
pp. 618-620 ◽  
Author(s):  
Xiaoxian Liu ◽  
Zhangming Zhu ◽  
Yintang Yang ◽  
Ruixue Ding ◽  
Yuejin Li
Keyword(s):  
Through Silicon Via ◽  
Modeling And Analysis ◽  
Electrical Modeling ◽  
Dielectric Cavity

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

2011 ◽  
Vol 59 (6) ◽  
pp. 1454-1460 ◽  
Author(s):  
En-Xiao Liu ◽  
Er-Ping Li ◽  
Wei-Bin Ewe ◽  
Hui Min Lee ◽  
Teck Guan Lim ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Through Silicon Via ◽  
Electrical Modeling

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

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