Wafer-Level Micro Alkali Vapor Cells with Anti-Relaxation Coating Compatible with MEMS Packaging for Chip-Scale Atomic Magnetometers

2017 ◽  
Author(s):  
Yu Ji ◽  
Jintang Shang ◽  
Qi Gan ◽  
Lei Wu
Keyword(s):  
Wafer Level ◽  
Mems Packaging ◽  
Vapor Cells

Effects of Packaging Induced Stress on MEMS Devices and Its Improvements

2006 ◽  
Vol 326-328 ◽  
pp. 529-532
Author(s):  
Sung Hoon Choa ◽  
Moon Chul Lee ◽  
Yong Chul Cho
Keyword(s):  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Mems Devices ◽  
Wafer Level ◽  
Process Technology ◽  
Molding Compound ◽  
Mems Packaging ◽  
Induced Stress ◽  
Induced Structure ◽  
Glass Process

In MEMS, packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. The conventional MEMS SOI (silicon-on-insulator) gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. Therefore we propose a packaged SiOG (Silicon On Glass) process technology and more robust spring design.

Wafer-Level Hermetic All-Glass Packaging for Microalkali Vapor Cells of Chip-Scale Atomic Devices

2015 ◽  
Vol 5 (11) ◽  
pp. 1551-1558 ◽  
Author(s):  
Yu Ji ◽  
Qi Gan ◽  
Lei Wu ◽  
Jintang Shang ◽  
Ching-Ping Wong
Keyword(s):  
Wafer Level ◽  
Vapor Cells ◽  
Glass Packaging

Characterization of Low Temperature, Wafer-Level Gold-Gold Thermocompression Bonds

1999 ◽  
Vol 605 ◽  
Author(s):  
Christine H. Tsau ◽  
Martin A. Schmidt ◽  
S. Mark Spearing
Keyword(s):  
Low Temperature ◽  
Strain Energy Release ◽  
Constant Load ◽  
Moderate Pressure ◽  
Cohesive Failure ◽  
Wafer Level ◽  
Simultaneous Application ◽  
Mems Packaging ◽  
Thermocompression Bonding ◽  
Die Bonding

AbstractLow temperature, wafer-level bonding offers several advantages in MEMS packaging, such as device protection during aggressive processing/handling and the possibility of vacuum sealing. Although thermocompression bonding can be achieved with a variety of metals, gold is often preferred because of its acceptance in die bonding [1] and its resistance to oxidation. This study demonstrates that the simultaneous application of moderate pressure (0.5 MPa) and temperature (300°C) produces strong wafer-level bonds. A four-point benddelamination technique was utilized to quantify bond toughness. Test specimens exhibited constant load versus displacement behavior during steady state crack propagation. Two distinct fracture modes were observed: cohesive failure within the Au and adhesive failure at the Ti-Si interface. The strain energy release rate for Au-Au fracture was found to be higher than that associated with Ti-Si fracture, consistent with the greater plastic deformation that occurs in the metal during fracture.

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