scholarly journals Metal-bonding-based hermetic wafer-level MEMS packaging technology using in-plane feedthrough: Hermeticity and high frequency characteristics of thick gold film feedthrough

2019 ◽  
Vol 206 (2) ◽  
pp. 44-53
Author(s):  
Masaaki Moriyama ◽  
Yukio Suzuki ◽  
Kentaro Totsu ◽  
Hideki Hirano ◽  
Shuji Tanaka
Keyword(s):  
High Frequency ◽  
Gold Film ◽  
Frequency Characteristics ◽  
Wafer Level ◽  
Packaging Technology ◽  
Mems Packaging ◽  
Metal Bonding ◽  
Thick Gold

Metal-Bonding-Based Hermetic Wafer-Level MEMS Packaging Technology Using In-Plane Feedthrough

2018 ◽  
Vol 138 (10) ◽  
pp. 485-494
Author(s):  
Masaaki Moriyama ◽  
Yukio Suzuki ◽  
Kentaro Totsu ◽  
Hideki Hirano ◽  
Shuji Tanaka
Keyword(s):  
Wafer Level ◽  
Packaging Technology ◽  
Mems Packaging ◽  
Metal Bonding

MEMS Wafer-level Packaging Technology Using LTCC Wafer

2012 ◽  
Vol 132 (8) ◽  
pp. 246-253 ◽  
Author(s):  
Mamoru Mohri ◽  
Masayoshi Esashi ◽  
Shuji Tanaka
Keyword(s):  
Wafer Level ◽  
Packaging Technology ◽  
Wafer Level Packaging

Analysis of High Frequency Characteristics for a Meander Line Slow-wave Structure

2020 ◽  
Author(s):  
Zheng Wen ◽  
Jirun Luo ◽  
Yu Fan ◽  
Chen Yang ◽  
Fang Zhu ◽  
...  
Keyword(s):  
Slow Wave ◽  
High Frequency ◽  
Wave Structure ◽  
Slow Wave Structure ◽  
Frequency Characteristics ◽  
Meander Line

Suspended high Q integrated inductor by wafer level packaging technology

2013 ◽  
Vol 21 (1) ◽  
pp. 215-219 ◽  
Author(s):  
M. Han ◽  
S. F. Wang ◽  
G. W. Xu ◽  
Le Luo
Keyword(s):  
Wafer Level ◽  
Packaging Technology ◽  
High Q ◽  
Integrated Inductor ◽  
Wafer Level Packaging

Mechanisms overview of Thermocompression Process for Copper Metal Bonding

2013 ◽  
Vol 1559 ◽  
Author(s):  
Paul Gondcharton ◽  
Floriane Baudin ◽  
Lamine Benaissa ◽  
Bruno Imbert
Keyword(s):  
Functional Integration ◽  
Pure Copper ◽  
Surface Preparation ◽  
Native Oxide ◽  
Process Window ◽  
Wafer Level ◽  
Metallic Oxide ◽  
Copper Diffusion ◽  
Thermomechanical Stress ◽  
Metal Bonding

ABSTRACTWafer level metal bonding involving copper material is widely used to achieve 3D functional integration of ICs and ensure effective packaging sealing for various applications. In this paper we focus on thermocompression bonding technology where temperature and pressure are used in parallel to assist the bonding process. More specifically a broad range of conditions was explored and interesting results were observed and are reported. Indeed, despite a relatively high roughness, the presence of a native oxide and the lack of surface preparation, there still exists a process window where wafer level bonding is allowed. In these conditions, limiting the bonding mechanisms to basic copper diffusion is no longer satisfactory. In this study, a specific scenario inspired by both wafer bonding and metal welding state of the art is put forward. Accordingly, pure copper diffusion through the bonding interface is lined with plastic deformation and metallic oxide fracture. In addition, polycrystalline film deformation due to thermomechanical stress is highlighted and grain growth and voiding formation are observed and confirmed.

High Quality Integrated Inductor in Fan-out Wafer-Level Packaging Technology for mm-Wave Applications

2021 ◽  
Author(s):  
Kavin Senthil Murugesan ◽  
Mykola Chernobryvko ◽  
Sherko Zinal ◽  
Marco Rossi ◽  
Ivan Ndip ◽  
...  
Keyword(s):  
Wafer Level ◽  
High Quality ◽  
Packaging Technology ◽  
Integrated Inductor ◽  
Wafer Level Packaging
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