Novel Process of RDL Formation for Advanced Packaging by Excimer Laser Ablation

2016 ◽  
Author(s):  
Habib Hichri ◽  
Markus Arendt ◽  
Matthew Gingerella
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Advanced Packaging

Embedded RDL Enabled by Excimer Laser Ablation

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 000367-000396
Author(s):  
Habib Hichri
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Material Selection ◽  
Cost Effective ◽  
High Energy ◽  
Laser Source ◽  
Process Step ◽  
Excimer Laser Ablation ◽  
New Process ◽  
Advanced Packaging

The continuous trend of the miniaturization, increasing performance and mobility of electronic devices drive the requirements of the chip itself but also its package type. The current integration process based on photolithography will be reaching the limit to develop cost effective and innovative package designs that meet the market requirements. In support of this technology trend and to address the industry problems Excimer laser ablation has been adopted in the semiconductor packaging industry and is now available as disruptive patterning technology. The complementary technology offers the promise of further reductions in manufacturing costs as well as enhancements in chip or package performance. Excimer laser ablation is a direct etching process that uses the advantage of the Excimer laser source to emit high energy pulses at short wavelengths. The combination of the Excimer laser source and dedicated projection optics ensures the capability of high resolution imaging. With this type of patterning technology the industry gets access to materials that do not require photo patterning. The paper proposes a new process based on the front end of line dual damascene integration flow for building multilayer RDL for Advanced Packaging using Excimer laser ablation. The new process uses Excimer laser ablation as the critical method to integrate via and RDL traces in one patterning process step, followed by seed layer deposition, plating and standard planarization processes. In this presentation, we will explain in detail the new proposed integration flow and further demonstrate its technical robustness for the chip interconnect combined with its commercial benefits to users. We will also cover the capability of this Excimer laser process to extend the material selection to non-photo materials.

Photoacoustic injury and bone healing following 193nm excimer laser ablation

1992 ◽  
Vol 12 (4) ◽  
pp. 390-396 ◽  
Author(s):  
Joshua Lustmann ◽  
Mario Ulmansky ◽  
Amihay Fuxbrunner ◽  
Aaron Lewis
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Bone Healing ◽  
Excimer Laser Ablation

Excimer-laser ablation and micro-patterning of ceramic Si 3 N 4

1997 ◽  
Vol 65 (3) ◽  
pp. 259-261 ◽  
Author(s):  
J. Heitz ◽  
J.D. Pedarnig ◽  
D. Bäuerle ◽  
G. Petzow
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Micro Patterning

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

Deposition of polyphenylene sulphide (PPS) polymer by pulsed excimer laser ablation

1992 ◽  
Vol 15 (4) ◽  
pp. 260-263 ◽  
Author(s):  
Sangeeta Kale ◽  
S.B. Ogale ◽  
J.P. Jog ◽  
V.M. Nadkarni
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Polyphenylene Sulphide
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