scholarly journals Low temperature, low pressure CMOS compatible Cu -Cu thermo-compression bonding with Ti passivation for 3D IC integration

2015 ◽  
Author(s):  
Asisa Kumar Panigrahi ◽  
Satish Bonam ◽  
Tamal Ghosh ◽  
Siva Rama Krishna Vanjari ◽  
Shiv Govind Singh
Keyword(s):  
Low Temperature ◽  
Low Pressure ◽  
3D Ic ◽  
Cmos Compatible

Low temperature CMOS compatible Cu-Cu thermo-compression bonding with constantan alloy passivation for 3D IC integration

2016 ◽  
Author(s):  
Asisa Kumar Panigrahi ◽  
Satish Bonam ◽  
Tamal Ghosh ◽  
Siva Rama Krishna Vanjari ◽  
Shiv Govind Singh
Keyword(s):  
Low Temperature ◽  
3D Ic ◽  
Cmos Compatible

Field ion microscopy

1988 ◽  
Vol 46 ◽  
pp. 434-435
Author(s):  
Gert Ehrlich
Keyword(s):  
Low Temperature ◽  
Sample Surface ◽  
Low Pressure ◽  
Radius Of Curvature ◽  
Field Ion Microscopy ◽  
Phosphor Screen ◽  
Ion Microscopy ◽  
Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

CHEMISORPTION OF CO AND METHANATION ON Rh SURFACES AT LOW TEMPERATURE AND LOW PRESSURE, AN ATOM-PROBE FIM STUDY

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-487-C6-492
Author(s):  
W. Liu ◽  
D. M. Ren ◽  
C. L. Bao ◽  
T. T. Tsong
Keyword(s):  
Low Temperature ◽  
Atom Probe ◽  
Low Pressure

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical

Silicide Based Low Temperature and Low Pressure Bonding of TI/SI for Microfludic and Hermetic Selaling Application

2018 ◽  
Author(s):  
C Hemanth Kumar ◽  
Asisa Kumar Pnaigrahi ◽  
Nirupam Paul ◽  
Satish Bonam ◽  
Siva Rama Krishna Vanjari ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Pressure

In situ optical monitoring of AlAs wet oxidation using a novel low-temperature low-pressure steam furnace design

1998 ◽  
Vol 10 (2) ◽  
pp. 197-199 ◽  
Author(s):  
S.A. Feld ◽  
J.P. Loehr ◽  
R.E. Sherriff ◽  
J. Wiemeri ◽  
R. Kaspi
Keyword(s):  
Low Temperature ◽  
Low Pressure ◽  
Wet Oxidation ◽  
Optical Monitoring ◽  
Furnace Design ◽  
Pressure Steam
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