Performance analysis of single- and multi-walled carbon nanotube based through silicon vias

2015 ◽  
Author(s):  
Arsalan Alam ◽  
Manoj Kumar Majumder ◽  
Archana Kumari ◽  
Vobulapuram Ramesh Kumar ◽  
Brajesh Kumar Kaushik
Keyword(s):  
Carbon Nanotube ◽  
Performance Analysis ◽  
Through Silicon Vias ◽  
Multi Walled Carbon Nanotube ◽  
Silicon Vias

scholarly journals Low-loss shielded through-silicon vias filled with multi-walled carbon nanotube bundle

2016 ◽  
Vol 58 ◽  
pp. 83-88 ◽  
Author(s):  
Jinrong Su ◽  
Runbo Ma ◽  
Xinwei Chen ◽  
Liping Han ◽  
Rongcao Yang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Low Loss ◽  
Through Silicon Vias ◽  
Multi Walled Carbon Nanotube ◽  
Silicon Vias ◽  
Nanotube Bundle

Modeling of Carbon Nanotube-Based Differential Through-Silicon Vias in 3-D ICs

2020 ◽  
Vol 19 ◽  
pp. 492-499 ◽  
Author(s):  
Wen-Sheng Zhao ◽  
Qing-Hao Hu ◽  
Kai Fu ◽  
Yuan-Yuan Zhang ◽  
Da-Wei Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Through Silicon Vias ◽  
Silicon Vias

Investigation of Carbon Nanotube-Based Through-Silicon Vias for PDN Applications

2018 ◽  
Vol 60 (3) ◽  
pp. 738-746 ◽  
Author(s):  
Jing Jin ◽  
Wen-Sheng Zhao ◽  
Da-Wei Wang ◽  
Hong-Sheng Chen ◽  
Er-Ping Li ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Through Silicon Vias ◽  
Silicon Vias

Development of Carbon Nanotube Based Through-Silicon Vias

2010 ◽  
Vol 1 (2) ◽  
Author(s):  
Bruce C. Kim ◽  
Sukeshwar Kannan ◽  
Anurag Gupta ◽  
Falah Mohammed ◽  
Byoungchul Ahn
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
High Performance ◽  
Integrated Systems ◽  
High Resistivity ◽  
Filler Materials ◽  
Through Silicon Vias ◽  
Single Walled Carbon Nanotube ◽  
Materials Used ◽  
Silicon Vias

The design and development of reliable 3D integrated systems require high performance interconnects, which in turn are largely dependent on the choice of filler materials used in through-silicon vias (TSVs). Copper, tungsten, and poly-silicon have been explored as filler materials; however, issues such as thermal incompatibility, electromigration, and high resistivity are still a bottleneck. In this paper, we investigate single-walled carbon nanotube (CNT) bundles as a prospective filler material for TSVs and have provided an analysis of CNT based TSVs for package and chip interconnects. The interconnects are fundamental bottlenecks to achieving high performance and reliability. We have provided electrical modeling and performed simulations on TSVs with copper and carbon nanotubes. The results from the CNT based TSVs were greatly superior to those from the conventional vias with copper.

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