Development of Carbon Nanotube Based Through-Silicon Vias

Author(s):  
Bruce C. Kim ◽  
Sukeshwar Kannan ◽  
Anurag Gupta ◽  
Falah Mohammed ◽  
Byoungchul Ahn

The design and development of reliable 3D integrated systems require high performance interconnects, which in turn are largely dependent on the choice of filler materials used in through-silicon vias (TSVs). Copper, tungsten, and poly-silicon have been explored as filler materials; however, issues such as thermal incompatibility, electromigration, and high resistivity are still a bottleneck. In this paper, we investigate single-walled carbon nanotube (CNT) bundles as a prospective filler material for TSVs and have provided an analysis of CNT based TSVs for package and chip interconnects. The interconnects are fundamental bottlenecks to achieving high performance and reliability. We have provided electrical modeling and performed simulations on TSVs with copper and carbon nanotubes. The results from the CNT based TSVs were greatly superior to those from the conventional vias with copper.

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Manoj Kumar Majumder ◽  
Archana Kumari ◽  
Brajesh Kumar Kaushik ◽  
Sanjeev Kumar Manhas

Development of a reliable 3D integrated system is largely dependent on the choice of filler materials used in through-silicon vias (TSVs). This research paper presents carbon nanotube (CNT) bundles as prospective filler materials for TSVs and provides an analysis of signal integrity for different single- (SWCNT), double- (DWCNT), and multi-walled CNT (MWCNT) bundle based TSVs. Depending on the physical configuration of a pair of TSVs, an equivalent electrical model is employed to analyze the in-phase and out-phase delays. It is observed that, using an MWCNT bundle (with number of shells = 10), the overall in-phase delays are reduced by 96.86%, 92.33%, 78.35%, and 32.72% compared to the bundled SWCNT, DWCNT, 4-shell MWCNT, and 8-shell MWCNT, respectively; similarly, the overall reduction in out-phase delay is 85.89%, 73.38%, 45.92%, and 12.56%, respectively.


RSC Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 2443-2449 ◽  
Author(s):  
Naohiro Terasawa

The electrochemical and electromechanical properties of actuators based on an ionic and non-ionic fluoropolymer gel, and an ionic liquid, fabricated using a single-walled carbon nanotube gel electrode.


2020 ◽  
Vol 13 (3) ◽  
pp. 868-883 ◽  
Author(s):  
Nick A. Shepelin ◽  
Peter C. Sherrell ◽  
Eirini Goudeli ◽  
Emmanuel N. Skountzos ◽  
Vanessa C. Lussini ◽  
...  

High-performance, unpoled and recyclable piezoelectric generators are produced by combining dipole templating via single-walled carbon nanotubes with shear-induced polarisation via 3D printing of fluoropolymers.


2009 ◽  
Vol 1240 ◽  
Author(s):  
Ji-Ye Kang ◽  
Su-Mi Eo ◽  
Loon-Seng Tan ◽  
Jong-Beom Baek

AbstractSingle-walled carbon nanotube (SWCNT) and multi-walled carbon nanotube (MWCNT) were functionalized with 3,4-diaminobenzoic acid via “direct” Friedel-Crafts acylation reaction in PPA/P2O5 to afford ortho-diamino-functionalized SWCNT (DIF-SWCNT) and MWCNT (DIF-MWCNT). The resultant DIF-SWCNT and DIF-MWCNT showed improved solubility and dispersibility. To improve interfacial adhesion between CNT and polymer matrix, the grafting of ABPBI onto the surface of DIF-SWCNT (10 wt%) or DIF-MWCNT (10 wt%) was conducted by simple in-situ polymerization of AB monomer, 3,4-diaminobenzoic acid dihydrochloride, in PPA. The resultant ABPBI-g-MWCNT and ABPBI-g-SWCNT showed improved the mechanical and electrical properties.


2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.


Nano Letters ◽  
2009 ◽  
Vol 9 (12) ◽  
pp. 4209-4214 ◽  
Author(s):  
Li Ding ◽  
Sheng Wang ◽  
Zhiyong Zhang ◽  
Qingsheng Zeng ◽  
Zhenxing Wang ◽  
...  

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