Failure analysis of complex 3D stacked-die IC packages using Microwave Induced Plasma afterglow decapsulation

2015 ◽  
Author(s):  
J. Tang ◽  
M.R. Curiel ◽  
S.L. Furcone ◽  
E.G.J. Reinders ◽  
C.Th.A. Revenberg ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Microwave Induced Plasma ◽  
Plasma Afterglow

Decapsulation of Multichip BOAC Devices with Exposed Copper Metallization Using Atmospheric Pressure Microwave Induced Plasma

2015 ◽  
Author(s):  
Jiaqi Tang ◽  
Kristopher D. Staller ◽  
Kees Beenakker
Keyword(s):  
Failure Analysis ◽  
Atmospheric Pressure ◽  
Microwave Plasma ◽  
Copper Metallization ◽  
Microwave Induced Plasma ◽  
Wire Bonds ◽  
Multiple Case ◽  
Multiple Case Studies ◽  
Ic Package ◽  
Problem Comparison

Abstract With the introduction of new packaging technologies and the great variety of semiconductor devices, new decapsulation tools are needed to improve failure analysis with a higher success rate, and to improve quality control with a higher confidence level. Conventional downstream microwave plasma etchers use CF4 or other fluorine containing compounds in the plasma gas that causes unwanted overetching damage to Si3N4 passivation and the Si die, thus limiting its use in IC package decapsulation. The approach of atmospheric pressure O2-only Microwave Induced Plasma (MIP) successfully solves the fluorine overetching problem. Comparison between MIP, conventional plasma, acid etching based on several challenging decapsulation applications has shown the great advantage of MIP in preserving the original status of the die, wire bonds, and failure sites. One of the challenging failure analysis cases is Bond-Over-Active-Circuit (BOAC) devices with exposed thin copper metallization traces on top of Si3N4 passivation. The BOAC critical die structures present a challenge to both conventional plasma and acid decapsulation. The use of MIP to solve the BOAC device decapsulation problem will be discussed in detail through multiple case studies. It appears that the MIP machine is the only approach to decapsulate BOAC devices without causing any damage to the exposed copper on passivation critical structure, which demonstrates the failure analysis capabilities of the MIP system.

CF4-Free Microwave Induced Plasma Decapsulation of Automotive Semiconductor Devices

2016 ◽  
Author(s):  
Jiaqi Tang ◽  
Jing Wang ◽  
Gregory B. Anderson ◽  
Johannes Bruckmeier ◽  
Claudia Keller ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Semiconductor Device ◽  
Copper Wire ◽  
Semiconductor Devices ◽  
Etching Rate ◽  
Automatic Process ◽  
Microwave Induced Plasma ◽  
Bond Wires ◽  
Etching Selectivity ◽  
Bond Pads

Abstract Failure analysis of automotive semiconductor devices requires highly reliable techniques to guaranty the success of artifact-free decapsulation with high repeatability and reproducibility. With the introduction of new qualification standards, new mold compounds, and new packaging structures, advanced decapsulation tools are needed to enable failure analysis to achieve a high success rate. Microwave Induced Plasma (MIP) machine has been developed as an advanced decapsulation solution. The CF4-free MIP etching ensures artifact-free exposure of bond wires made of new materials, the die, passivation, bond pads, and original failure sites. The high mold compound etching rate, high etching selectivity of mold compound to wire/pad/passivation/die, and the fully automatic process are the unique features of MIP decapsulation. Comparisons are made between acid, conventional plasma with CF4, and CF4-free MIP decapsulation. Multiple case studies are discussed that address challenging automotive semiconductor device decapsulation, including bare copper wire, copper redistribution layer, exposed power copper metal, stitch bond on silver plated leadframe, complex mold compound, Bond-Over-Active-Circuit, eWLB, and localized decapsulation.

Halogen-Free Microwave Induced Plasma Decapsulation of System in Package Modules

2017 ◽  
Author(s):  
J. Tang ◽  
J. Wang ◽  
St.J. Dixon-Warren ◽  
C.I.M. Beenakker
Keyword(s):  
Complex System ◽  
Acoustic Wave ◽  
Failure Analysis ◽  
Success Rate ◽  
Wide Spectrum ◽  
Bulk Acoustic Wave ◽  
Passive Components ◽  
Microwave Induced Plasma ◽  
Halogen Free ◽  
Wave Filters

Abstract When it comes to complex system-in-package (SiP) with a wide spectrum of materials and packaging structures integrated into a single module, decapsulation and the following failure analysis become extremely complex. Previous work published by the authors' group has demonstrated that a halogen-free microwave induced plasma (MIP) system has great advantage compared to the conventional techniques mentioned before. This paper explores the applicability of the halogen-free MIP on the most complex SiP module decapsulation. Applications in special structures in SiP include 3D stacked-die, gallium arsenide, surface acoustic wave (SAW) and bulk acoustic wave filters, and copper re-distribution layer. The halogen-free MIP decapsulation process can expose and preserve all the dies and passive components as well as the original failure sites, which proves to be key to ensuring a high success rate in SiP failure analysis.

Benefits of Using a CF4-Free Microwave Induced Plasma (MIP) Spot Etch Process to Remove Underfill and Analyze 2.5D Modules

2020 ◽  
Author(s):  
Kevin Distelhurst ◽  
Joe Myers ◽  
Dan Bader ◽  
Ron Russotti ◽  
Pradip Pichumani ◽  
...  
Keyword(s):  
Electron Beam ◽  
Failure Analysis ◽  
Case Studies ◽  
Cross Sectional ◽  
Microwave Induced Plasma ◽  
O2 Plasma

Abstract Advanced packages such as 2.5D will continue to grow in demand as performance increases are needed in various applications. Failure analysis must adapt to the changes in the interfaces, materials and structures being developed and now utilized. Traditional techniques and tools used for selectively removing materials to isolate and analyze defects need to evolve alongside these packages. A CF4-free Microwave Induced Plasma (MIP) process is used to remove underfill (UF) with minimal alteration of other materials on the samples, a process which has become more difficult on 2.5D modules. UF is removed using this MIP process to allow subsequent analysis on interposer interconnects and ìbumps in crosssection. SEM inspection, Electron Beam Absorbed Current (EBAC), and FIB are techniques used post cross-sectional UF removal of these 2.5D structures. The benefits of the specific MIP process through case studies are presented. Specifically, the use of an automatic cleaning step and a CF4-free downstream O2 plasma allow easy removal of UF without damaging other structures of interest with little tool recipe development.

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