3D Integration technologies using self-assembly and electrostatic temporary multichip bonding

Author(s):  
T. Fukushima ◽  
H. Hashiguchi ◽  
J. Bea ◽  
M. Murugesan ◽  
K.-W. Lee ◽  
...  
Keyword(s):  
2010 ◽  
Author(s):  
E. Iwata ◽  
Y. Ohara ◽  
K. W. Lee ◽  
T. Fukushima ◽  
T. Tanaka ◽  
...  
Keyword(s):  

2013 ◽  
Author(s):  
H. Hashiguchi ◽  
T. Fukushima ◽  
J.C. Bea ◽  
K.W. Lee ◽  
T. Tanaka ◽  
...  
Keyword(s):  

Nanoscale ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 2787-2792 ◽  
Author(s):  
Ruijin Hu ◽  
Haiguang Ma ◽  
Han Yin ◽  
Jun Xu ◽  
Kunji Chen ◽  
...  

3D integration of stacked Si nanowire arrays via a self assembly growth on Bosch-etched sidewalls and a successful demonstration of high performance staked channel transistors with an impressive on/off current >107.


2014 ◽  
Vol 23 (3) ◽  
pp. 579-584 ◽  
Author(s):  
Kwang Soon Park ◽  
Cagdas Varel ◽  
Ji Hao Hoo ◽  
Rajashree Baskaran ◽  
Karl F. Bohringer

Author(s):  
T. Fukushima ◽  
J. Bea ◽  
M. Murugesan ◽  
K.-W. Lee ◽  
T. Tanaka ◽  
...  
Keyword(s):  

2008 ◽  
Vol 1112 ◽  
Author(s):  
Takafumi Fukushima ◽  
Tetsu Tanaka ◽  
Mitsumasa Koyanagi

AbstractWe have demonstrated that a number of known good dies (KGDs) can be precisely aligned in batch and stacked on LSI wafers by our chip-to-wafer three-dimensional (3D) integration technology using an innovative self-assembly technique. Compared with conventional robotic pick-and-place chip assembly, the fluidic self-assembly can provide high-throughput chip alignment and bonding, and the resulting self-assembled chips have high alignment accuracy of approximately 0.3 micron on average. Immediately after chip release, the chips are aligned onto the predetermined hydrophilic bonding areas in a short time within 0.1 sec by the surface tension of aqueous liquid used in our self-assembly. By using the self-assembly, a number of KGDs with different chip sizes, different materials and different devices can be stacked in high yield to give highly integrated 3D chips we call the 3D Super Chip.


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