Characterization of solder joint electromigration for flip chip technology

2004 ◽  
Author(s):  
Jong-Kai Lin ◽  
Jin-Wook Jang ◽  
J. White
Keyword(s):  
Solder Joint ◽  
Flip Chip ◽  
Chip Technology

Reliability Prediction of Area Array Solder Joints

2003 ◽  
Vol 125 (4) ◽  
pp. 562-568 ◽  
Author(s):  
Rainer Dudek ◽  
Ralf Do¨ring ◽  
Bernd Michel
Keyword(s):  
Geometric Modeling ◽  
Flip Chip ◽  
Failure Criteria ◽  
Temperature Fields ◽  
The Finite Element Method ◽  
Chip Technology ◽  
Array Technology ◽  
Chip Scale Package ◽  
Solder Balls

Packages for high pin counts using the ball grid array technology or its miniaturized version, the chip scale package, inherently require reliability concepts as an integral part of their development. This is especially true for the latter packages, if they are combined with the flip chip technology. Accordingly, thermal fatigue of the solder balls is frequently investigated by means of the finite element method. Various modeling assumptions and simplifications are common to restrict the calculation effort. Some of them, like geometric modeling assumptions, assumptions concerning the homogeneity of the cyclic temperature fields, simplified creep characterization of solder, and the related application of Manson-Coffin failure criteria, are discussed in the paper. The packages chosen for detailed analyses are a PBGA 272 and a FC-CSP 230.

Characterization of the ternary phase at the Sn/Ni–V joint

2008 ◽  
Vol 23 (10) ◽  
pp. 2743-2748 ◽  
Author(s):  
Chih-chi Chen ◽  
Sinn-wen Chen ◽  
Chih-horng Chang
Keyword(s):  
Activation Energy ◽  
Amorphous Phase ◽  
Ternary Phase ◽  
Flip Chip ◽  
Interfacial Reactions ◽  
Fast Diffusion ◽  
Chip Technology ◽  
Primary Element ◽  
T Phase

Ni–7 wt% V diffusion barrier is commonly used in flip chip technology, and Sn is the primary element of all commercial electronic solders. Different from the interfacial reactions in the Sn/Ni couples, a ternary T phase is formed in the Sn/Ni–7 wt% V couples reacted at temperatures lower than 350 °C. The T phase is a mixture of an amorphous phase and the Ni3Sn4 phase with grains about 50 nm in size. The amorphous phase is composed mainly of Sn and V atoms, and it is formed due to the fast diffusion of Sn and relative immobility of V. Activation energy of the T phase formation is 16.5 kJ/mol, which is approximately 50% of that of the Ni3Sn4 phase determined from the Sn/Ni interfacial reactions. The T phase is no longer formed and the reaction product is the Ni3Sn4 phase in the Sn/Ni–7 wt% V couples reacted at temperatures higher than 350 °C.

Predicting the Liquid Formation for the Solder Joints in Flip Chip Technology

2005 ◽  
Vol 128 (4) ◽  
pp. 331-338 ◽  
Author(s):  
Wen-Hwa Chen ◽  
Shu-Ru Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Surface Tension ◽  
Solder Joint ◽  
Flip Chip ◽  
Solder Joints ◽  
Geometric Method ◽  
External Loading ◽  
Surface Evolver ◽  
Eutectic Solder ◽  
Chip Technology ◽  
Interfacial Surface

An accurate and efficient analytical geometric method is presented for predicting the geometric parameters of the controlled collapse chip connection type solder joint using direct chip attach technology after a reflow process. By this method, the meridian of the solder joint is first discretized as a series of sufficiently fine fragmental arcs. After calculating the internal pressure inside the molten eutectic solder from the forces balance, the meridional and circumferential radii of curvature of each arc are then obtained from the Laplace-Young equation. As a result, the coordinates of each node of the arc and the solder joint geometry can be determined in turn. The factors that affect the final shape of the molten eutectic solder joints, including the solder volumes, external loading, pad size, surface tension of molten eutectic solder, and interfacial surface tension between the molten eutectic solder and the solid high-lead bump are considered herein. The results computed by the analytical geometric method are also compared with those obtained using the Surface Evolver program, the extended Heinrich’s model, and the experimental results. The results of the various approaches are mutually consistent.

Thin-Die Flip Chip Physical-FA Process Flow

2002 ◽  
Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Semiconductor Industry ◽  
Organic Substrate ◽  
Fault Isolation ◽  
Preparation Methods ◽  
Chip Technology ◽  
Isolation Test ◽  
Sample Preparation Methods

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.

Failure Analysis of Flip-Chip Interconnections Through Acoustic Microscopy

1996 ◽  
Author(s):  
O. Diaz de Leon ◽  
M. Nassirian ◽  
C. Todd ◽  
R. Chowdhury
Keyword(s):  
Failure Analysis ◽  
Large Scale ◽  
Flip Chip ◽  
Ultrasonic Waves ◽  
Acoustic Microscopy ◽  
Acoustic Microscope ◽  
Chip Technology ◽  
Ball Joints ◽  
Non Destructive ◽  
Scanning Acoustic Microscope

Abstract Integration of circuits on semiconductor devices with resulting increase in pin counts is driving the need for improvements in packaging for functionality and reliability. One solution to this demand is the Flip- Chip concept in Ultra Large Scale Integration (ULSI) applications [1]. The flip-chip technology is based on the direct attach principle of die to substrate interconnection.. The absence of bondwires clearly enables packages to become more slim and compact, and also provides higher pin counts and higher-speeds [2]. However, due to its construction, with inherent hidden structures the Flip-Chip technology presents a challenge for non-destructive Failure Analysis (F/A). The scanning acoustic microscope (SAM) has recently emerged as a valuable evaluation tool for this purpose [3]. C-mode scanning acoustic microscope (C-SAM), has the ability to demonstrate non-destructive package analysis while imaging the internal features of this package. Ultrasonic waves are very sensitive, particularly when they encounter density variations at surfaces, e.g. variations such as voids or delaminations similar to air gaps. These two anomalies are common to flip-chips. The primary issue with this package technology is the non-uniformity of the die attach through solder ball joints and epoxy underfill. The ball joints also present defects as open contacts, voids or cracks. In our acoustic microscopy study packages with known defects are considered. It includes C-SCAN analysis giving top views at a particular package interface and a B-SCAN analysis that provides cross-sectional views at a desired point of interest. The cross-section analysis capability gives confidence to the failure analyst in obtaining information from a failing area without physically sectioning the sample and destroying its electrical integrity. Our results presented here prove that appropriate selection of acoustic scanning modes and frequency parameters leads to good reliable correlation between the physical defects in the devices and the information given by the acoustic microscope.

scholarly journals Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

2021 ◽  
Vol 11 (15) ◽  
pp. 7057
Author(s):  
Lin Wang ◽  
Zhe Cheng ◽  
Zhi-Guo Yu ◽  
De-Feng Lin ◽  
Zhe Liu ◽  
...  
Keyword(s):  
Flip Chip ◽  
High Electron Mobility Transistors ◽  
Wire Bonding ◽  
High Electron ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Turn On ◽  
Electron Mobility Transistors ◽  
Chip Technology ◽  
Switching Characteristics

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

Monolithic Thin Film Red LED Active-matrix Micro-display by Flip-chip Technology

2021 ◽  
pp. 1-1
Author(s):  
Peian Li ◽  
Xu Zhang ◽  
Wing Cheung Chong ◽  
Kei May Lau
Keyword(s):  
Thin Film ◽  
Flip Chip ◽  
Active Matrix ◽  
Chip Technology ◽  
Red Led

Experimental evaluation of SnAgCu solder joint reliability in 100-μm pitch flip-chip assemblies

2014 ◽  
Vol 54 (5) ◽  
pp. 939-944 ◽  
Author(s):  
Ye Tian ◽  
Xi Liu ◽  
Justin Chow ◽  
Yi Ping Wu ◽  
Suresh K. Sitaraman
Keyword(s):  
Solder Joint ◽  
Experimental Evaluation ◽  
Flip Chip ◽  
Solder Joint Reliability ◽  
Snagcu Solder ◽  
Joint Reliability
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