Electromigration of flip chip solder bump on Cu/Ni(V)/Al thin film under bump metallization

2003 ◽  
Author(s):  
W.J. Choi ◽  
E.C.C. Yeh ◽  
K.N. Tu ◽  
P. Elenius ◽  
H. Balkan
Keyword(s):  
Thin Film ◽  
Flip Chip ◽  
Solder Bump ◽  
Under Bump Metallization ◽  
Al Thin Film

Mechanism of interfacial reaction for the Sn-Pb solder bump with Ni/Cu under-bump metallization in flip-chip technology

2004 ◽  
Vol 33 (10) ◽  
pp. 1118-1129 ◽  
Author(s):  
Guh-Yaw Jang ◽  
Chien-Sheng Huang ◽  
Li-Yin Hsiao ◽  
Jenq-Gong Duh ◽  
Hideyuki Takahashi
Keyword(s):  
Interfacial Reaction ◽  
Flip Chip ◽  
Solder Bump ◽  
Under Bump Metallization ◽  
Chip Technology

Electromigration Performance of Pb-Free μPILR™ Flip-Chip Packages

2010 ◽  
Vol 2010 (1) ◽  
pp. 000234-000241
Author(s):  
Rajesh Katkar ◽  
Laura Mirkarimi
Keyword(s):  
Thin Film ◽  
Flip Chip ◽  
Solder Joints ◽  
Void Formation ◽  
Current Direction ◽  
Under Bump Metallization ◽  
Substrate Side ◽  
Solder Interface

The μPILR interconnect is a copper pillar manufactured as a part of a substrate pad. In this paper, we discuss the electromigration (EM) performance of Pb-free μPILR interconnects in a multi-pair daisy chain within 150μm pitch flip-chip packages. Electromigration performance of μPILR interconnects has shown a significant improvement and noticeably delayed electromigration induced failures. Voids initially begin to appear at Cu6Sn5 and solder interface on the die side, with eventual open failure due to excessive void formation along with a severe depletion of Cu Under Bump Metallization (UBM). No failure was observed on the substrate side of the interconnect regardless of the current direction. The enhanced performance of the μPILR interconnect along with other reliability benefits makes it an excellent alternative to conventional solder joints including thin film stack UBMs, thicker copper UBM as well as copper pillar on die.

Reliability analysis of Au–Sn flip-chip solder bump fabricated by co-electroplating

2007 ◽  
Vol 22 (5) ◽  
pp. 1219-1229 ◽  
Author(s):  
Jeong-Won Yoon ◽  
Hyun-Suk Chun ◽  
Seung-Boo Jung
Keyword(s):  
Brittle Failure ◽  
Flip Chip ◽  
Solder Bump ◽  
Solder Matrix ◽  
Average Diameter ◽  
Under Bump Metallization ◽  
Mechanical Reliability ◽  
Shear Tests ◽  
Solder Bumps ◽  
Δ Phase

In this study, we fabricated eutectic Au–Sn (Au–20 wt% Sn) flip-chip solder bumps from a single electroplating bath. After reflowing, the average diameter of the solder bump was approximately 80 μm. The (Ni,Au)3Sn2 phase was initially formed when the liquid Au–Sn solder reacted with the Ni UBM (under bump metallization). After aging at 150 °C, the (Ni,Au)3Sn2 intermetallic compound (IMC), which formed at the interface during reflow, was fully transformed into the (Au,Ni)Sn IMC due to the restricted supply of Ni atoms from the UBM to the interface. On the other hand, after aging at 250 °C for 1000 h, two IMC layers, (Au,Ni)Sn and (Ni,Au)3Sn2, were formed at the interface. The lower (Ni,Au)3Sn2 phase was formed when the (Au,Ni)Sn phase reacted with the Ni UBM. The interfacial (Au,Ni)Sn IMC grew with the preferential consumption of the available δ-phase in the solder matrix. Eventually, the ζ-phase covered most of the interfacial layer. In the bump shear tests, the Au–Sn/Ni joint aged at 150 °C fractured through the bulk of the solder, confirming the mechanical reliability of the interface. In contrast, the Au–Sn/Ni joint aged at 250 °C fractured along the interface, thereby demonstrating brittle failure, possibly a result of the brittle IMC layer at the interface.

The Use of Precision Selective Area Milling for Failure Analysis of Flip-Chip Packages

2002 ◽  
Author(s):  
George F. Gaut
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Solder Bump ◽  
Selective Area ◽  
Fill Material ◽  
Solder Bumps ◽  
Time Required

Abstract Access to the solder bump and under-fill material of flip-chip devices has presented a new problem for failure analysts. The under-fill and solder bumps have also added a new source for failure causes. A new tool has become available that can reduce the time required to analyze this area of a flip-chip package. By using precision selective area milling it is possible to remove material (die or PCB) that will allow other tools to expose the source of the failure.

Monolithic Thin Film Red LED Active-matrix Micro-display by Flip-chip Technology

2021 ◽  
pp. 1-1
Author(s):  
Peian Li ◽  
Xu Zhang ◽  
Wing Cheung Chong ◽  
Kei May Lau
Keyword(s):  
Thin Film ◽  
Flip Chip ◽  
Active Matrix ◽  
Chip Technology ◽  
Red Led

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

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