A study of delamination growth in the die-attach layer of plastic IC packages under hygrothermal loading during solder reflow

2003 ◽  
Author(s):  
A.A.O. Tay ◽  
K.Y. Goh
Keyword(s):  
Delamination Growth ◽  
Die Attach ◽  
Solder Reflow

Automated Assembly and Hermetic Packaging of MOEMS for Applications Requiring Extended Shelf-Lives

2005 ◽  
Author(s):  
Dan O. Popa ◽  
Michael Deeds ◽  
Abiodun Fasoro ◽  
Heather Beardsley ◽  
Jeongsik Sin ◽  
...  
Keyword(s):  
Machine Vision ◽  
Shelf Life ◽  
Cost Effective ◽  
Wire Bonding ◽  
Automated Assembly ◽  
Hermetic Packaging ◽  
Die Attach ◽  
Pick And Place ◽  
Solder Reflow ◽  
Seam Sealing

In this paper we describe two modular automated microassembly systems, along with a several packaging processes that have been integrated to produce reliable and cost-effective MOEMS devices. The automated and packaging systems consists of robotics such as pick and place, insertion and fastening, machine vision and controls, and processes such as die attach, solder reflow by laser, wire bonding and seam sealing. The target MOEMS devices are intended for applications requiring a minimum twenty year shelf-life.

Sequential Reflow-Process Optimization to Reduce Die-Attach Solder Voids

2015 ◽  
Vol 137 (2) ◽  
Author(s):  
Youmin Yu ◽  
Victor Chiriac ◽  
Yingwei Jiang ◽  
Zhijie Wang
Keyword(s):  
Heat Transfer ◽  
Theoretical Prediction ◽  
Integrated Circuit ◽  
Sequential Optimization ◽  
Solder Paste ◽  
Lead Frame ◽  
Reflow Process ◽  
Sequential Method ◽  
Die Attach ◽  
Solder Reflow

Solder voids are detrimental to the thermal, mechanical, and reliability performance of integrated circuit (IC) packages and must be controlled within certain specifications. A sequential method of optimizing solder-reflow process to reduce die-attach solder voids in power quad flat no-lead (QFN) packages is presented. The sequential optimization consists, in turn, of theoretical prediction, heat transfer comparison, and experimental validation. First, the theoretical prediction uses calculations to find the optimal pause location and time for a lead frame strip (with dies bonded to it by solder paste) to receive uniform heat transfer during the solder-reflow stage. Next, reflow profiles at different locations on the lead frame strip are measured. Heat transfer during the reflow stage at these locations is calculated from the measured reflow profiles and is compared to each other to confirm the theoretical prediction. Finally, only a minimal number of actual trials are conducted to verify the predicted and confirmed optimal process. Since the theoretical prediction and heat transfer comparison screens out most of the unnecessary trials which must be conducted in common design of experiment (DoE) and trial-and-error methods, the sequential optimization method saves significant time and cost.

Analysis of Two Electrical Failures Caused by Die Attach of Exposed Pad Package

2014 ◽  
Author(s):  
Jinglong Li ◽  
Motohiko Masuda ◽  
Yi Che ◽  
Miao Wu
Keyword(s):  
Bonding Process ◽  
Die Attach ◽  
Die Bonding ◽  
Generic Analysis

Abstract Die attach is well known in die bonding process. Its electrical character is simple. But some failures caused by die attach are not so simple. And it is not proper to analyze by a generic analysis flow. The analysis of two failures caused by die attach are presented in this paper.

Effect of sintering density on thermal reliability by non-pressure sintering die-attach

2021 ◽  
Author(s):  
Ryo Kato ◽  
Masatoshi Okuda ◽  
Suguru Hashidate ◽  
Takamichi Mori ◽  
Junichiro Minami ◽  
...  
Keyword(s):  
Thermal Reliability ◽  
Die Attach

Thermally stable high temperature die attach solution

2016 ◽  
Vol 89 ◽  
pp. 1310-1314 ◽  
Author(s):  
Seyed Amir Paknejad ◽  
Ali Mansourian ◽  
Yohan Noh ◽  
Khalid Khtatba ◽  
Samjid H. Mannan
Keyword(s):  
High Temperature ◽  
Thermally Stable ◽  
Die Attach

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

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