Creep behavior of a flip-chip package by both FEM modeling and real time moire interferometry

2002 ◽  
Author(s):  
Jianjun Wang ◽  
Zhengfang Qian ◽  
Daqing Zou ◽  
Sheng Liu
Keyword(s):  
Real Time ◽  
Creep Behavior ◽  
Flip Chip ◽  
Moiré Interferometry ◽  
Moire Interferometry ◽  
Fem Modeling

Creep Behavior of a Flip-Chip Package by Both FEM Modeling and Real Time Moire´ Interferometry

1998 ◽  
Vol 120 (2) ◽  
pp. 179-185 ◽  
Author(s):  
J. Wang ◽  
Z. Qian ◽  
D. Zou ◽  
S. Liu
Keyword(s):  
Finite Element ◽  
Creep Behavior ◽  
Thermal Load ◽  
Flip Chip ◽  
Moiré Interferometry ◽  
Moire Interferometry ◽  
Initial State ◽  
Element Analysis ◽  
The Finite Element Analysis ◽  
Solder Balls

In this paper, the creep behavior of a flip-chip package under a thermal load was investigated by using nonlinear finite element technique coupled with high density laser moire´ interferometry. The real-time moire´ interferometry technique was used to monitor and measure the time-dependent deformation of flip-chip packages during the test, while the finite element method was adapted to analyze the variation of stresses at edges and corners of interfaces with time by considering the viscoelastic properties of the underfill and the viscoplastic behavior of the solder balls. The results show that the creep behavior of the underfill and the solder balls does not have significant effect on the warpage of the flip-chip under the considered thermal load due to their constrained small volume. The variation of the time-dependent deformation in the flip-chip package caused by the creep behavior of the underfill and the solder balls is in the submicro scale. The maximum steady-state U-displacement is only reduced by up to 6.7 percent compared with the maximum initial state U-displacement. Likewise, the maximum steady-state V-displacement is merely reduced by up to 10 percent compared with the maximum initial state V-displacement. The creep behavior slightly weakens the warpage situation of the flip-chip package. However, the modeling results show that the localized stresses at corners and edges of interfaces greatly decrease due to the consideration of viscoelastic properties of the underfill and the viscoplastic properties of the solder balls, and, thereby, effectively preventing interfaces from cracking. In addition, the predicted deformation values of the flip-chip package obtained from the finite element analysis were compared with the test data obtained from the laser moire´ interferometry technique. It is shown that the deformation values of the flip-chip package predicted from the finite element analysis are in a fair agreement with those obtained from the test.

An Advanced Real-Time Moire´ Interferometry System With Conductive Heating/Cooling and Its Application on a Creep Behavior of Solder

2007 ◽  
Author(s):  
Seungmin Cho ◽  
Changsoo Jang ◽  
Bongtae Han
Keyword(s):  
Solder Joint ◽  
Real Time ◽  
Creep Behavior ◽  
Constitutive Models ◽  
Temperature Response ◽  
Moiré Interferometry ◽  
Moire Interferometry ◽  
Ramp Rate ◽  
Conductive Heating ◽  
Heating And Cooling

A new real-time moire´ interferometry system based on conductive heating and cooling is introduced. A special chamber is designed and fabricated using a high power thermoelectric cooler, which is connected to the compact moire´ interferometer to form the system. Compared with the conventional convection-based system, the proposed system provides a higher ramp rate while improving the temperature response to control signals. The system is applied to investigate the creep behavior of a eutectic solder material. A new solder joint configuration is designed and fabricated to produce a virtually uniform shear strain field. The deformation of solder joint is documented at a controlled ramp rate over several thermal cycles. The experimental results are analyzed and compared with those of finite element analyses to investigate the validity of solder constitutive models available in the literatures.

scholarly journals Real-time optical differentiation for moire interferometry

1987 ◽  
Vol 26 (10) ◽  
pp. 1977 ◽  
Author(s):  
Krzysztof Patorski ◽  
Daniel Post ◽  
Robert Czarnek ◽  
Yifan Guo
Keyword(s):  
Real Time ◽  
Moiré Interferometry ◽  
Moire Interferometry

In‐Situ Mapping and Modeling Verification of Thermomechanical Deformation in Underfilled Flip‐Chip Packaging Using Moiré Interferometry

1996 ◽  
Vol 445 ◽  
Author(s):  
Xiang Dai ◽  
Connie Kim ◽  
Ralf Willecke ◽  
Paul S. Ho
Keyword(s):  
Flip Chip ◽  
Thermal Loading ◽  
Deformation Monitoring ◽  
Moiré Interferometry ◽  
Moire Interferometry ◽  
Fringe Analysis ◽  
Element Analysis ◽  
Solder Bumps ◽  
Thermomechanical Deformation

AbstractAn experimental technique of environmental moiré interferometry has been developed for in‐situ monitoring and analysis of thermomechanical deformation of microelectronics packages subjected to thermal loading under a controlled atmosphere. Coupled with fractional fringe analysis and digital image processing, the environmental moiré interferometry technique achieves accurate and realistic deformation monitoring with high sensitivity and excellent spatial resolution. It has been applied to investigate the thermomechanical deformations induced by thermal loading in an underfilled flip‐chip‐on‐board packaging. The effects of temperature change in the range of 102 °C to 22 °C are analyzed for underfill and solder bumps. In addition, shear deformation and shear strains across the solder bumps are determined as a function of temperature. The experimental results are compared with the results of a finite element analysis for modeling verification. Good agreement between the modeling results and experimental measurements has been found in the overall displacement fields. Through this study, the role of underfill in the thermomechanical deformation of the underfilled flip‐chip package is determined.

Effect of High Glass Transition Temperature on Reliability of Non-Conductive Film (NCF)

2006 ◽  
Vol 326-328 ◽  
pp. 517-520 ◽  
Author(s):  
Jin Hyoung Park ◽  
Chang Kyu Chung ◽  
Kyoung Wook Paik ◽  
Soon Bok Lee
Keyword(s):  
Glass Transition ◽  
Shear Strain ◽  
Flip Chip ◽  
Coefficient Of Thermal Expansion ◽  
Moiré Interferometry ◽  
Moire Interferometry ◽  
Effective Parameters ◽  
Conductive Film ◽  
Interferometry Method ◽  
Stress Free State

Among many factors that influence the reliability of a flip-chip assembly using NCF interconnections, the most effective parameters are often the coefficient of thermal expansion (CTE), the modulus (E), and the glass transition temperatures (Tg). Of these factors, the effect of Tg on thermal deformation and device reliability is significant; however, it has not been shown clearly what effect Tg has on the reliability of NCF. The Tg of a conventional NCF material is approximately 110°C. In this study, a new high Tg NCF material that has a 140oC Tg is proposed. The thermal behaviors of the conventional and new NCFs between -40oC to 150oC are observed using an optical method. Twyman-Green interferometry and the moiré interferometry method are used to measure the thermal micro-deformations. The Twyman-Green interferometry measurement technique is applied to verify the stress-free state. The stress-free temperatures of the conventional and new Tg NCF materials are approximately 100oC and 120oC respectively. A shear strain at a part of the NCF chip edge is measured by moiré interferometry. Additionally, a method to accurately measure the residual warpage and shear strain at room temperature is proposed. Through the analysis of the relationship between the warpage and the shear strain, the effect of the high-Tg NCF material on the reliability is studied.

scholarly journals Thermal Deformation Analysis of Flip-Chip Devices by Moire Interferometry.

2002 ◽  
Vol 5 (7) ◽  
pp. 654-659
Author(s):  
Yasuyuki MORITA ◽  
Kazuo ARAKAWA ◽  
Mitsugu TODO ◽  
Masayuki KANETO
Keyword(s):  
Thermal Deformation ◽  
Flip Chip ◽  
Moiré Interferometry ◽  
Deformation Analysis ◽  
Moire Interferometry
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