Resolving displacement field of solder ball in flip-chip package by both phase shifting moire interferometry and FEM modeling

2002 ◽  
Author(s):  
Sheng Liu ◽  
Jianjun Wang ◽  
Daqing Zou ◽  
Xiaoynan He ◽  
Zhengfang Qian ◽  
...  
Keyword(s):  
Displacement Field ◽  
Solder Ball ◽  
Flip Chip ◽  
Moiré Interferometry ◽  
Phase Shifting ◽  
Moire Interferometry ◽  
Fem Modeling

Full Field Joule Heating Measurement of Copper Plate Using Phase Shifting Moire´ Interferometry in Microscopic Scale

2009 ◽  
Author(s):  
Bicheng Chen ◽  
Cemal Basaran
Keyword(s):  
Joule Heating ◽  
Current Density ◽  
Moiré Interferometry ◽  
Phase Shifting ◽  
Moire Interferometry ◽  
Heating Effect ◽  
Full Field ◽  
Microscopic Scale ◽  
Joule Heating Effect ◽  
Heating Effects

Heat generated from Joule heating is an important factor in several failure mechanisms in microelectronic packaging (e.g. thermomigration, electromigration and etc) and large amount of the heat causes severe heat dissipation problem. It is further exaggerated by the continuous marching towards miniaturization of microelectronics. The techniques of measuring the Joule heating effects at the microscopic scale are quite limited especially for the full field measurement. Infrared microscopic imaging has been reported to measure the heat radiation by the Joule heating in the microscopic scale. Moire´ interferometry with phase shifting is a highly sensitive and a high resolution method to measure the in-plane full field strain. In this paper, it is demonstrated that the Joule heating effect can be measured by Moire´ interferometry with phase shifting at the microscopic scale. The copper sheet is used for the demonstration because of isotropic material property and well known thermal properties and parameters. The specimen was designed to minimize the out-of-plane strain and the strain caused by the thermal-structural effects. A finite element model was developed to verify the design of the structure of the specimen and the specimen was tested under different current density (input current from 0 to 24 A). Based on the research, a correlation relationship between the current density and the strain in two orthogonal directions (one in the direction of the current flow) was determined. The regression coefficients of the full field were analyzed. The experiment demonstrates the capability of measuring microscopic Joule heating effects by using Moire´ interferometry with phase shifting. The method can be further applied to the measurement of Joule heating effect in the microscopic solid structures in the electronic packaging devices.

In‐Situ Mapping and Modeling Verification of Thermomechanical Deformation in Underfilled Flip‐Chip Packaging Using Moiré Interferometry

1996 ◽  
Vol 445 ◽  
Author(s):  
Xiang Dai ◽  
Connie Kim ◽  
Ralf Willecke ◽  
Paul S. Ho
Keyword(s):  
Flip Chip ◽  
Thermal Loading ◽  
Deformation Monitoring ◽  
Moiré Interferometry ◽  
Moire Interferometry ◽  
Fringe Analysis ◽  
Element Analysis ◽  
Solder Bumps ◽  
Thermomechanical Deformation

AbstractAn experimental technique of environmental moiré interferometry has been developed for in‐situ monitoring and analysis of thermomechanical deformation of microelectronics packages subjected to thermal loading under a controlled atmosphere. Coupled with fractional fringe analysis and digital image processing, the environmental moiré interferometry technique achieves accurate and realistic deformation monitoring with high sensitivity and excellent spatial resolution. It has been applied to investigate the thermomechanical deformations induced by thermal loading in an underfilled flip‐chip‐on‐board packaging. The effects of temperature change in the range of 102 °C to 22 °C are analyzed for underfill and solder bumps. In addition, shear deformation and shear strains across the solder bumps are determined as a function of temperature. The experimental results are compared with the results of a finite element analysis for modeling verification. Good agreement between the modeling results and experimental measurements has been found in the overall displacement fields. Through this study, the role of underfill in the thermomechanical deformation of the underfilled flip‐chip package is determined.

Effect of High Glass Transition Temperature on Reliability of Non-Conductive Film (NCF)

2006 ◽  
Vol 326-328 ◽  
pp. 517-520 ◽  
Author(s):  
Jin Hyoung Park ◽  
Chang Kyu Chung ◽  
Kyoung Wook Paik ◽  
Soon Bok Lee
Keyword(s):  
Glass Transition ◽  
Shear Strain ◽  
Flip Chip ◽  
Coefficient Of Thermal Expansion ◽  
Moiré Interferometry ◽  
Moire Interferometry ◽  
Effective Parameters ◽  
Conductive Film ◽  
Interferometry Method ◽  
Stress Free State

Among many factors that influence the reliability of a flip-chip assembly using NCF interconnections, the most effective parameters are often the coefficient of thermal expansion (CTE), the modulus (E), and the glass transition temperatures (Tg). Of these factors, the effect of Tg on thermal deformation and device reliability is significant; however, it has not been shown clearly what effect Tg has on the reliability of NCF. The Tg of a conventional NCF material is approximately 110°C. In this study, a new high Tg NCF material that has a 140oC Tg is proposed. The thermal behaviors of the conventional and new NCFs between -40oC to 150oC are observed using an optical method. Twyman-Green interferometry and the moiré interferometry method are used to measure the thermal micro-deformations. The Twyman-Green interferometry measurement technique is applied to verify the stress-free state. The stress-free temperatures of the conventional and new Tg NCF materials are approximately 100oC and 120oC respectively. A shear strain at a part of the NCF chip edge is measured by moiré interferometry. Additionally, a method to accurately measure the residual warpage and shear strain at room temperature is proposed. Through the analysis of the relationship between the warpage and the shear strain, the effect of the high-Tg NCF material on the reliability is studied.

Vibration error-compensation technique in phase shifting moiré interferometry

2017 ◽  
Vol 41 (3) ◽  
pp. 279-288
Author(s):  
K. Zhang ◽  
Q. Liu ◽  
C. Sun ◽  
P. Yang ◽  
Y. Tang ◽  
...  
Keyword(s):  
Error Compensation ◽  
Moiré Interferometry ◽  
Phase Shifting ◽  
Moire Interferometry ◽  
Compensation Technique ◽  
Vibration Error
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