Comparison of temperature sensitive electrical parameter based methods for junction temperature determination during accelerated aging of power electronics

2018 ◽  
Vol 88-90 ◽  
pp. 534-539 ◽  
Author(s):  
F. Wuest ◽  
S. Trampert ◽  
S. Janzen ◽  
S. Straube ◽  
M. Schneider-Ramelow
Keyword(s):  
Power Electronics ◽  
Electrical Parameter ◽  
Accelerated Aging ◽  
Junction Temperature ◽  
Temperature Sensitive ◽  
Temperature Determination

Study of temperature sensitive optical parameters and junction temperature determination of light-emitting diodes

2012 ◽  
Vol 100 (20) ◽  
pp. 202108 ◽  
Author(s):  
Yue Lin ◽  
Yu-Lin Gao ◽  
Yi-Jun Lu ◽  
Li-Hong Zhu ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Temperature Sensitive ◽  
Optical Parameters ◽  
Light Emitting ◽  
Temperature Determination

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Life Time ◽  
Junction Temperature ◽  
Limiting Factors ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

scholarly journals In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2745
Author(s):  
Alessandro Soldati ◽  
Matteo Dalboni ◽  
Roberto Menozzi ◽  
Carlo Concari
Keyword(s):  
Junction Temperature ◽  
Controlled Environment ◽  
Temperature Sensitive ◽  
Polyimide Films ◽  
Temperature Estimation ◽  
Electric Parameter ◽  
Conventional Procedure ◽  
Thermal Chamber ◽  
Characterization Procedure

The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper, we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.

scholarly journals Junction Temperature Control for More Reliable Power Electronics

2018 ◽  
Vol 33 (1) ◽  
pp. 765-776 ◽  
Author(s):  
Markus Andresen ◽  
Ke Ma ◽  
Giampaolo Buticchi ◽  
Johannes Falck ◽  
Frede Blaabjerg ◽  
...  
Keyword(s):  
Power Electronics ◽  
Temperature Control ◽  
Junction Temperature
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