Leakage current analysis of grid connected transformerless solar inverters with zero vector isolation

2011 ◽  
Author(s):  
Ziya Ozkan ◽  
Ahmet M. Hava
Keyword(s):  
Leakage Current ◽  
Current Analysis ◽  
Zero Vector

Leakage current analysis of polymeric insulators under uniform and non-uniform pollution conditions

2017 ◽  
Vol 11 (11) ◽  
pp. 2947-2957 ◽  
Author(s):  
Iman Ahmadi-Joneidi ◽  
Amir Abbas Shayegani-Akmal ◽  
Hossein Mohseni
Keyword(s):  
Leakage Current ◽  
Current Analysis ◽  
Polymeric Insulators

Leakage Current Analysis of GaN-Based Light-Emitting Diodes Using a Parasitic Diode Model

2015 ◽  
Vol 62 (10) ◽  
pp. 3322-3325 ◽  
Author(s):  
Eunjin Jung ◽  
June Key Lee ◽  
Min Soo Kim ◽  
Hyunsoo Kim
Keyword(s):  
Leakage Current ◽  
Light Emitting Diodes ◽  
Current Analysis ◽  
Light Emitting

Rapid Thermal Annealing of Ion Implanted p-n Junction in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
C. Ho ◽  
R. Kwor ◽  
C. Araujo ◽  
J. Gelpey
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dwell Time ◽  
Annealing Temperature ◽  
Current Analysis ◽  
Junction Depth ◽  
Leakage Currents ◽  
Dopant Activation ◽  
Secondary Ion

ABSTRACTThe rapid thermal annealing (RTA) of p+n and n+p diodes, fabricated by the LOCOS process, and its subsequent effects on junction leakage current, junction depth and dopant activation were investigated. The reverse bias diode leakage currents of implanted Si <100> samples (As+: 60 KeY, 5×1014 5×1015 cm−2, B+: 25 KeV, l×1014, l×1015 cm−2 and BF2+: 45 KeV, 1×1015cm−2 ) were measured as functions of annealing temperature, and dwell time. The annealing was performed using an Eaton RTA system (Nova ROA-400) at temperatures ranging from 950 °C to 1150 °C. Annealing times ranged from 0.2 sec. to 10 sec. The results from the diode leakage current analysis are correlated with those from Secondary Ion Mass Spectroscopy (SIMS) and differential Hall measurements. The reverse-biased leakage currents from the RTA-treated samples are compared with those from furnace-annealed samples.

Leakage current analysis of diamond Schottky barrier diodes by defect imaging

2013 ◽  
Vol 40 ◽  
pp. 56-59 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Natsuo Tatsumi ◽  
Yukako Kato ◽  
Shin-ichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Current Analysis ◽  
Defect Imaging

Photo-Leakage-Current Analysis of Poly-Si TFT by Using Rear Irradiation OBIC Method

1998 ◽  
Vol 507 ◽  
Author(s):  
Masatoshi Wakagi ◽  
Tatsuya Ookubo ◽  
Masahiko Ando ◽  
Genshiro Kawachi ◽  
Akio Mimura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Method ◽  
Optical Beam ◽  
Induced Current ◽  
Current Analysis ◽  
Low Concentration ◽  
Drain Electrode ◽  
Lightly Doped Drain ◽  
Optical Beam Induced Current

ABSTRACTPhoto-leakage-current of poly-Si (polycrystalline Si) TFFs has been investigated by using the rear irradiation OBIC (Optical Beam Induced Current) method. In the case of the offset gate TFIs, it was found that the photo-leakage-current was generated in the offset region of the drain electrode side. In order to reduce the photo-leakage-current, low concentration phosphor (P) was doped in the offset region, which corresponds to LDD (Lightly Doped Drain) structure. In the LDD TFT, the photo leakage current at the offset region decreased remarkably, because of the reduction of hole transportation in this region.

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