Leakage Current Analysis of GaN-Based Light-Emitting Diodes Using a Parasitic Diode Model

2015 ◽  
Vol 62 (10) ◽  
pp. 3322-3325 ◽  
Author(s):  
Eunjin Jung ◽  
June Key Lee ◽  
Min Soo Kim ◽  
Hyunsoo Kim
Keyword(s):  
Leakage Current ◽  
Light Emitting Diodes ◽  
Current Analysis ◽  
Light Emitting

scholarly journals Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes

AIP Advances ◽  
2015 ◽  
Vol 5 (8) ◽  
pp. 087151 ◽  
Author(s):  
Ting Zhi ◽  
Tao Tao ◽  
Bin Liu ◽  
Yi Li ◽  
Zhe Zhuang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Light Emitting Diodes ◽  
Tunneling Model ◽  
Light Emitting

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

2013 ◽  
Vol 34 (11) ◽  
pp. 1409-1411 ◽  
Author(s):  
Jaekyun Kim ◽  
Joosung Kim ◽  
Youngjo Tak ◽  
Suhee Chae ◽  
Jun-Youn Kim ◽  
...  
Keyword(s):  
Leakage Current ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Reverse Leakage Current

The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes

2016 ◽  
Vol 33 (11) ◽  
pp. 117301 ◽  
Author(s):  
Feng Dai ◽  
Xue-Feng Zheng ◽  
Pei-Xian Li ◽  
Xiao-Hui Hou ◽  
Ying-Zhe Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Transport Mechanisms ◽  
Light Emitting ◽  
Reverse Leakage Current ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes

2021 ◽  
Vol 11 (19) ◽  
pp. 9321
Author(s):  
Gun Hee Lee ◽  
Tran Viet Cuong ◽  
Dong Kyu Yeo ◽  
Hyunjin Cho ◽  
Beo Deul Ryu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Light Emitting Diodes ◽  
Hexagonal Boron Nitride ◽  
Operating Temperature ◽  
Passivation Layer ◽  
Light Emitting ◽  
Heat Dispersion ◽  
Current Characteristics ◽  
Dispersion Layer ◽  
Low Temperature Process

We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. The effect of h-BN on device performance and reliability is investigated. At −5 V, the leakage current of the h-BN passivated LED was -1.15 x 10−9 A, which was one order lower than the reference LED’s leakage current of −1.09 × 10−8 A. The h-BN layer minimizes the leakage current characteristics and operating temperature by acting as a passivation and heat dispersion layer. With a reduced working temperature of 33 from 45 °C, the LED lifetime was extended 2.5 times following h-BN passivation. According to our findings, h-BN passivation significantly improves LED reliability.

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

2019 ◽  
Vol 31 (21) ◽  
pp. 1697-1700
Author(s):  
Tao Tao ◽  
Rong Zhang ◽  
Ting Zhi ◽  
Bin Liu ◽  
Jianming Lei ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Leakage Current Characteristic of Vertical GaN-Based Light Emitting Diodes with Passivation Structures

2007 ◽  
Vol 10 (11) ◽  
pp. H334 ◽  
Author(s):  
Sunjung Kim ◽  
Duk-Kyu Bae ◽  
Jeong-Hyeon Choi ◽  
Jun-Ho Jang ◽  
Jeong-Soo Lee
Keyword(s):  
Leakage Current ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Current Characteristic

Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes

2014 ◽  
Vol 59 (12) ◽  
pp. 1276-1279 ◽  
Author(s):  
Rong Jiang ◽  
Dawei Yan ◽  
Hai Lu ◽  
Rong Zhang ◽  
Dunjun Chen ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Reverse Leakage Current ◽  
Ultraviolet Light Emitting Diodes
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