Patterning PZT Thin Films using Reactive Ion Beam Etching for PiezoMEMS, RF MEMS Resonator and Filter Applications

2019 ◽  
Author(s):  
Robinson James ◽  
Yannick Pilloux
Keyword(s):  
Thin Films ◽  
Rf Mems ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Pzt Thin Films ◽  
Mems Resonator ◽  
Reactive Ion Beam Etching

Reactive Ion Beam Etching of PZT Thin Films

2003 ◽  
Vol 288 (1) ◽  
pp. 253-263 ◽  
Author(s):  
C. Soyer ◽  
E. Cattan ◽  
D. Remiens
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Pzt Thin Films ◽  
Reactive Ion Beam Etching

Influence of the Microstructure and of an Ion Beam Etching on the Domain Propagation in PZT Thin Films

2002 ◽  
Vol 50 (1) ◽  
pp. 231-240 ◽  
Author(s):  
B. Gautier ◽  
C. Soyer ◽  
E. Cattan ◽  
D. Remiens ◽  
J.-Ci. Labrune
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Pzt Thin Films

Surface Fluorination of Polyimide Thin Films by CF4 + O2 Reactive Ion Beam Etching

1986 ◽  
Vol 75 ◽  
Author(s):  
William E. Vanderlinde ◽  
Arthur L. Ruoff
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Atom Concentration ◽  
Oxygen Ion ◽  
Theoretical Predictions ◽  
Ion Current Density ◽  
Surface Fluorination ◽  
Reactive Ion Beam Etching

AbstractSurface fluorination of polyimide thin films during CF4 + O2 reactive ion beam etching (RIBE) was investigated. The removal of the fluorinated layer by a subsequent oxygen ion beam etch was also studied. Electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering spectrometry (RBS) detected a fluorinated surface layer on the order of 100 A thick. Fluorine atom concentration in the surface of the film (as measured by RBS) and the etch rate of the film were measured as a function of several experimental parameters: ion energy, ion current density, etch time, and gas composition. The results are compared with theoretical predictions of the total number of fluorine atoms retained in the film after etching.

Reactive Ion Beam Etching Using a Selective Gallium Doping Method

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Gallium Doping ◽  
Reactive Ion Beam Etching
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