Patterning PZT Thin Films using Reactive Ion Beam Etching for PiezoMEMS, RF MEMS Resonator and Filter Applications

Author(s):  
Robinson James ◽  
Yannick Pilloux
2003 ◽  
Vol 288 (1) ◽  
pp. 253-263 ◽  
Author(s):  
C. Soyer ◽  
E. Cattan ◽  
D. Remiens

2002 ◽  
Vol 50 (1) ◽  
pp. 231-240 ◽  
Author(s):  
B. Gautier ◽  
C. Soyer ◽  
E. Cattan ◽  
D. Remiens ◽  
J.-Ci. Labrune

1986 ◽  
Vol 75 ◽  
Author(s):  
William E. Vanderlinde ◽  
Arthur L. Ruoff

AbstractSurface fluorination of polyimide thin films during CF4 + O2 reactive ion beam etching (RIBE) was investigated. The removal of the fluorinated layer by a subsequent oxygen ion beam etch was also studied. Electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering spectrometry (RBS) detected a fluorinated surface layer on the order of 100 A thick. Fluorine atom concentration in the surface of the film (as measured by RBS) and the etch rate of the film were measured as a function of several experimental parameters: ion energy, ion current density, etch time, and gas composition. The results are compared with theoretical predictions of the total number of fluorine atoms retained in the film after etching.


1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato

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