A novel variational approach for modeling sub-0.1 micron MOS devices including Quantum Mechanical interface charge confinement effects

2003 ◽  
Author(s):  
N.G. Gunther ◽  
A.A. Mutlu ◽  
M. Rahman
Keyword(s):  
Variational Approach ◽  
Quantum Mechanical ◽  
Confinement Effects ◽  
Mos Devices ◽  
Interface Charge ◽  
Mechanical Interface

An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region

2004 ◽  
Vol 30 (3-4) ◽  
pp. 235-241 ◽  
Author(s):  
T Hanajiri ◽  
K Aoto ◽  
T Hoshino ◽  
M Niizato ◽  
Y Nakajima ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Quantum Mechanical ◽  
Mechanical Modeling ◽  
Mos Devices

scholarly journals Analysis of Interface Charge Using Capacitance-Voltage Method for Ultra Thin HfO2 Gate Dielectric Based MOS Devices

2015 ◽  
Vol 57 ◽  
pp. 757-760 ◽  
Author(s):  
N.P. Maity ◽  
R.R. Thakur ◽  
Reshmi Maity ◽  
R.K. Thapa ◽  
S. Baishya
Keyword(s):  
Gate Dielectric ◽  
Mos Devices ◽  
Interface Charge ◽  
Capacitance Voltage

The Investigation of Fluorine Effects on Charge Trapping and Interface State Generation in Mos Structures

1991 ◽  
Vol 219 ◽  
Author(s):  
Dunxian D. Xie ◽  
Ta-Cheng Lin ◽  
Donald R. Young
Keyword(s):  
Charge Trapping ◽  
Interface State ◽  
Flat Band ◽  
Physical Damage ◽  
Mos Devices ◽  
Interface Charge ◽  
State Generation ◽  
Fluorinated Oxides ◽  
Donor States ◽  
Mos Structures

ABSTRACTThe bulk and interface charge trapping phenomena of fluorinated oxides have been studied by various electronic measurements. Fluorine is introduced into dry oxides by low energy (25kev) implantation followed by a 1000°C N2 ambient anneal to remove physical damage. Both the flat band and the mid gap voltage shifts of such MOS devices are measured during avalanche electron injection. We have developed techniques to separate effects due to interface state generation from bulk trapping effects. The bulk electron traps in the fluorinated oxides have a different cross section from the known water-related traps in conventional oxides. The generation of fast and slow interface states for different dosages of fluorine implantation is discussed based on Q-V and C-V measurements. The fast interface donor states, generated during avalanche injection, are charged at flat band but discharged at mid gap and beyond. An optimum dosage of fluorine implantation is found to suppress the so called turn-around effect during avalanche injection due to the formation of slow donor states. Finally, injection under high temperature (120°C-150°C) anneals out most of these donor states.

Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices

2012 ◽  
Vol 59 (7) ◽  
pp. 1837-1843 ◽  
Author(s):  
A. S. Spinelli ◽  
Christian Monzio Compagnoni ◽  
A. Maconi ◽  
S. M. Amoroso ◽  
A. L. Lacaita
Keyword(s):  
Charge Distribution ◽  
Quantum Mechanical ◽  
Mos Devices ◽  
Mechanical Charge
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