High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

2002 ◽  
Author(s):  
Y. Sano ◽  
T. Yamada ◽  
J. Mita ◽  
K. Kaifu ◽  
H. Ishikawa ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Gan Hemts ◽  
Recessed Gate

High Performance AlGaN/GaN HEMTs with Recessed Gate

2002 ◽  
Vol 389-393 ◽  
pp. 1511-1514
Author(s):  
Y. Sano ◽  
J. Mita ◽  
T. Yamada ◽  
T. Makita ◽  
K. Kaifu ◽  
...  
Keyword(s):  
High Performance ◽  
Gan Hemts ◽  
Recessed Gate

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

2011 ◽  
Vol 32 (12) ◽  
pp. 1677-1679 ◽  
Author(s):  
Kelson D. Chabak ◽  
Dennis E. Walker ◽  
Michael R. Johnson ◽  
Antonio Crespo ◽  
Amir M. Dabiran ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Gate Insulator ◽  
Gan Hemts

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

2003 ◽  
Vol 200 (1) ◽  
pp. 187-190 ◽  
Author(s):  
Hideyuki Okita ◽  
Katsuaki Kaifu ◽  
Juro Mita ◽  
Tomoyuki Yamada ◽  
Yoshiaki Sano ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemt ◽  
High Transconductance ◽  
Recessed Gate

Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate

2003 ◽  
Vol 47 (11) ◽  
pp. 2081-2084 ◽  
Author(s):  
Jaesun Lee ◽  
Dongmin Liu ◽  
Zhaojun Lin ◽  
Wu Lu ◽  
Jeffrey S. Flynn ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Enhancement Mode ◽  
Gan Hemts

High-Performance Analysis of Recessed Gate AlN/β-Ga2O3 HEMT

2021 ◽  
Author(s):  
Tushar Shivam ◽  
B S Saini ◽  
Ramesh K Sunkaria ◽  
Ravi Ranjan
Keyword(s):  
Performance Analysis ◽  
High Performance ◽  
Recessed Gate
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