Nanometer-scale Distributions of Field Emission Current Measured with Scanning Tunneling Microscopy

2006 ◽  
Author(s):  
T. Sato ◽  
M. Saida ◽  
M. Nagao ◽  
S. Yamamoto ◽  
M. Sasaki
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Field Emission ◽  
Emission Current ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscopy ◽  
Field Emission Current

scholarly journals Effects of Antimony Deposition on Field-Emission Current Density of Ge/Si

2021 ◽  
Vol 9 (2) ◽  
Author(s):  
Veronika Burobina
Keyword(s):  
Field Emission ◽  
Current Density ◽  
Emission Current Density ◽  
Emission Current ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Field Emission Current ◽  
Current Voltage ◽  
Field Emission Current Density ◽  
20 Nm

Abstract To estimate the field-emission current density of a Ge/Si heterosystem, 20-nm germanium/silicon (100) samples were grown by molecular beam epitaxy. The surface of one sample was covered with a layer of antimony, which was removed in vacuum prior to the samples being measured. A second sample of Ge/Si was exposed to room air in the absence of antimony. The current–voltage characteristics of both samples obtained by scanning tunneling microscopy (STM) were discovered to be in agreement with classical Fowler–Nordheim theory. The density of emission current from Ge nanocrystal exceeds the density of emission current from the wetting layer of Ge/Si. The density of emission current of pure Ge nanocrystal is less than the density of emission current of Ge nanocrystal with adsorption layers.

Recording at the Nanometer Scale on p-Nitrobenzonitrile Thin Films by Scanning Tunneling Microscopy

2001 ◽  
Vol 13 (14) ◽  
pp. 1103-1105 ◽  
Author(s):  
D. X. Shi ◽  
Y. L. Song ◽  
D. B. Zhu ◽  
H. X. Zhang ◽  
S. S. Xie ◽  
...  
Keyword(s):  
Thin Films ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscopy

Stm Observation of Solid Phase Epitaxy Processes of Ar-Sputtered Si(100) Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Masamichi Yoshimura ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Double Layer ◽  
Solid Phase ◽  
The Other ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Partially Observed

ABSTRACTScanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(100) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590°C, at which temperature a (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620°C, the areas of the c(2×2) and c(4×4) reconstruction surrounded by amorphous regions develops. New defect models for the (2×2) and c(4×4) structures are proposed w here alternating arrangements of the buckled dimers together with missing dimer defects are considered. On the other hand, after thermal annealing of the Ar+-ion bombarded Si at 830°C for 10 sec, terraces of (2×1) and (1×2) orientations arc observed on the surface, and pyramidal structures on a nanometer-scale which consists of double-layer step edges (dimer rows perpendicular to terrace edge) arc observed.

Threshold behavior of nanometer scale fabrication process using scanning tunneling microscopy

1997 ◽  
Vol 81 (3) ◽  
pp. 1227-1230 ◽  
Author(s):  
Chen Wang ◽  
Xiaodong Li ◽  
Guangyi Shang ◽  
Xiaohui Qiu ◽  
Chunli Bai
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Fabrication Process ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Threshold Behavior ◽  
Tunneling Microscopy
Sign in / Sign up

Export Citation Format

Share Document