Threshold behavior of nanometer scale fabrication process using scanning tunneling microscopy

1997 ◽  
Vol 81 (3) ◽  
pp. 1227-1230 ◽  
Author(s):  
Chen Wang ◽  
Xiaodong Li ◽  
Guangyi Shang ◽  
Xiaohui Qiu ◽  
Chunli Bai
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Fabrication Process ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Threshold Behavior ◽  
Tunneling Microscopy

Recording at the Nanometer Scale on p-Nitrobenzonitrile Thin Films by Scanning Tunneling Microscopy

2001 ◽  
Vol 13 (14) ◽  
pp. 1103-1105 ◽  
Author(s):  
D. X. Shi ◽  
Y. L. Song ◽  
D. B. Zhu ◽  
H. X. Zhang ◽  
S. S. Xie ◽  
...  
Keyword(s):  
Thin Films ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscopy

Stm Observation of Solid Phase Epitaxy Processes of Ar-Sputtered Si(100) Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Masamichi Yoshimura ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Double Layer ◽  
Solid Phase ◽  
The Other ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Partially Observed

ABSTRACTScanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(100) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590°C, at which temperature a (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620°C, the areas of the c(2×2) and c(4×4) reconstruction surrounded by amorphous regions develops. New defect models for the (2×2) and c(4×4) structures are proposed w here alternating arrangements of the buckled dimers together with missing dimer defects are considered. On the other hand, after thermal annealing of the Ar+-ion bombarded Si at 830°C for 10 sec, terraces of (2×1) and (1×2) orientations arc observed on the surface, and pyramidal structures on a nanometer-scale which consists of double-layer step edges (dimer rows perpendicular to terrace edge) arc observed.

Nanometer-Scale Pulsed Laser Modification of the Basal Plane of Graphite Observed with Stm

1990 ◽  
Vol 191 ◽  
Author(s):  
M. A. Schildbach ◽  
R. J. Tench ◽  
M. Balooch ◽  
W. J. Siekhaus
Keyword(s):  
Surface Modification ◽  
Scanning Tunneling Microscopy ◽  
Basal Plane ◽  
Pyrolytic Graphite ◽  
Pulsed Laser ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Scale Morphology ◽  
Tunneling Microscopy ◽  
Laser Modification

ABSTRACTScanning tunneling microscopy has been used to document changes in the nanometer-scale morphology of the basal plane of highly oriented pyrolytic graphite after exposure to 7 ns, 1064 nm laser.pulses in air. Surface modification was visible at fluences far below those that produce melting. Damage appears first on step edges and consists of exfoliation of graphite layers and recession of steps through removal of mono- or multilayer patches.

Nanometer Scale Structures Resulting from Graphite Oxidation

1994 ◽  
Vol 332 ◽  
Author(s):  
Marilyn J. Nowakowski ◽  
John M. Vohs ◽  
Dawn A. Bonnell
Keyword(s):  
Electronic Structure ◽  
Scanning Tunneling Microscopy ◽  
Oxygen Plasma ◽  
Pyrolytic Graphite ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscopy ◽  
Graphite Oxidation ◽  
Local Electronic Structure ◽  
Scale Structures

ABSTRACTScanning tunneling microscopy (STM) and spectroscopy (STS) were used to characterize highly oriented pyrolytic graphite (HOPG) which was oxidized by two different methods, furnace heating in atmosphere and immersion in oxygen plasma. The character of the surfaces was found to be dissimilar on a micron scale but comparable on a nanometer scale, at which both appear to be comprised of sharp step edges. Variations in local electronic structure near a step edge were compared.

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