Single-atom point source for electrons: Field-emission resonance tunneling in scanning tunneling microscopy

1993 ◽  
Vol 47 (19) ◽  
pp. 12832-12839 ◽  
Author(s):  
J. W. Gadzuk
2000 ◽  
Vol 07 (05n06) ◽  
pp. 589-593 ◽  
Author(s):  
S. KODAMBAKA ◽  
V. PETROVA ◽  
A. VAILIONIS ◽  
P. DESJARDINS ◽  
D. G. CAHILL ◽  
...  

In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN (001) terraces and in single-atom deep vacancy pits at temperatures of 750–950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs–Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23±0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4±0.3 eV.


1992 ◽  
Vol 06 (19) ◽  
pp. 1205-1207 ◽  
Author(s):  
S. EHARA ◽  
T. TAKAGI ◽  
T. YOSHIDA ◽  
H. INABA ◽  
H. NAITO ◽  
...  

The negative resistance of the tunneling currents was observed in a semiconducting organic thin film on a graphite substrate by an STM (Scanning Tunneling Microscopy). This negative resistance may be understood by the theory of a molecular resonance tunneling effect.


1994 ◽  
Vol 65 (23) ◽  
pp. 3022-3024 ◽  
Author(s):  
Juan José Sáenz ◽  
Ricardo García

2020 ◽  
Vol 3 (4) ◽  
pp. 3410-3416 ◽  
Author(s):  
Lei Yu ◽  
Zhe Wang ◽  
Haijian Chen ◽  
Jing Guo ◽  
Mingyang Zhang ◽  
...  

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