A Complete and Fully Qualified Design Flow for Verification of Mixed-Signal SoC with Embedded Flash Memories

A Machine Learning-based Approach to Optimize Repair and Increase Yield of Embedded Flash Memories in Automotive Systems-on-Chip

2019 IEEE European Test Symposium (ETS) ◽

10.1109/ets.2019.8791529 ◽

2019 ◽

Author(s):

A. Manzini ◽

P. Inglese ◽

L. Caldi ◽

R. Cantero ◽

G. Carnevale ◽

...

Keyword(s):

Machine Learning ◽

Flash Memories ◽

Automotive Systems ◽

Systems On Chip ◽

On Chip ◽

Embedded Flash

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An Overview of Failure Mechanisms in Embedded Flash Memories

24th IEEE VLSI Test Symposium ◽

10.1109/vts.2006.19 ◽

2006 ◽

Cited By ~ 12

Author(s):

O. Ginez ◽

J.-M. Daga ◽

M. Combe ◽

P. Girard ◽

C. Landrault ◽

...

Keyword(s):

Failure Mechanisms ◽

Flash Memories ◽

Embedded Flash

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Architecture for Highly Reliable Embedded Flash Memories

2007 IEEE Design and Diagnostics of Electronic Circuits and Systems ◽

10.1109/ddecs.2007.4295257 ◽

2007 ◽

Cited By ~ 3

Author(s):

Benoit Godard ◽

Jean-Michel Daga ◽

Lionel Torres ◽

Gilles Sassatelli

Keyword(s):

Flash Memories ◽

Embedded Flash

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A P1500-compatible programmable BIST approach for the test of embedded flash memories

2003 Design, Automation and Test in Europe Conference and Exhibition ◽

10.1109/date.2003.1253692 ◽

2003 ◽

Cited By ~ 6

Author(s):

P. Bernardi ◽

M. Rebaudengo ◽

M.S. Reorda ◽

M. Violante

Keyword(s):

Flash Memories ◽

Embedded Flash

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Interface Study of SiO2/ HfO2/SiO2 Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories

MRS Proceedings ◽

10.1557/proc-1252-i07-08 ◽

2010 ◽

Vol 1252 ◽

Author(s):

Alexandre Guiraud ◽

Nicolas Breil ◽

Mickaël Gros-Jean ◽

Damien Deleruyelle ◽

Gilles Micolau ◽

...

Keyword(s):

Electrical Properties ◽

Future Generations ◽

Silicate Layer ◽

Electrical Measurements ◽

Flash Memories ◽

Thermal Budget ◽

The Impact ◽

Interface Study ◽

Embedded Flash

AbstractWe have investigated the integration of Hf-based material as Inter Poly Dielectric in flash memories devices. Electrical measurements showed the good properties of SiO2/HfO2/SiO2 stacks. We then interested to the impact of the thermal budget on this specific stack which induces changes in the electrical properties. XPS measurements suggests those changes are due to the presence of an Hf-silicate layer at the SiO2/HfO2 interface.

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