Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits

1997 ◽  
Vol 3 (3) ◽  
pp. 874-884 ◽  
Author(s):  
J.J. Coleman ◽  
R.M. Lammert ◽  
M.L. Osowski ◽  
A.M. Jones
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Selective Area

AlGaInAs MOVPE selective area growth for photonic integrated circuits

2015 ◽  
Vol 4 (2) ◽  
Author(s):  
Jean Decobert ◽  
Guillaume Binet ◽  
Alvaro D. B. Maia ◽  
Pierre-Yves Lagrée ◽  
Christophe Kazmierski
Keyword(s):  
Integrated Circuits ◽  
Band Gap ◽  
Vapor Phase ◽  
High Speed ◽  
Photonic Integrated Circuits ◽  
Effective Diffusion ◽  
Selective Area Growth ◽  
Multiple Quantum ◽  
Selective Area ◽  
Area Growth

AbstractWe developed a generic photonic integration platform based on selective area growth (SAG) by metal organic vapor-phase epitaxy (MOVPE) of AlGaInAs/InP multiple quantum well (MQW) material. For efficient and predictive band gap engineering of photonic integrated circuits, different SAG zones of active and passive function heterostructures are precisely modeled and characterized. With the vapor-phase diffusion model, using numerical simulations of finite volumes, we extracted the three effective diffusion lengths of Al, Ga, and In species. In our growth conditions, these lengths were 32, 65, and 14 μm, respectively. The Kardar-Parisi-Zhang (KPZ) equation, a classic approach to describe the growing interface profile, is used. AlGaInAs MQW properties are then simulated in terms of thickness, composition, band gap, and biaxial strain variations. Highly resolved μ-photoluminescence and optical interferometer microscopy measurements confirm the validity of the band gap and thickness variations for both bulk and MQW layers. A new diffractometer, with a submillimeter X-ray spot, was used to study the structural properties of the MQW in the center of the SAG area. As an application, we present the realization and operation of full-monolithic high-speed advanced modulation format transmitters based on novel prefixed optical phase switching by fast electro-absorption modulators.

scholarly journals Wafer-scale low-loss lithium niobate photonic integrated circuits

2020 ◽  
Author(s):  
Kevin Luke ◽  
Prashanta Kharel ◽  
Christian Reimer ◽  
Lingyan He ◽  
Marko Loncar ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Low Loss ◽  
Wafer Scale

scholarly journals Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

ACS Photonics ◽  
2021 ◽  
Author(s):  
Chen Shang ◽  
Yating Wan ◽  
Jennifer Selvidge ◽  
Eamonn Hughes ◽  
Robert Herrick ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Quantum Dot Lasers
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