1.55 μm GaSb/AlGaSb MQW diode lasers grown on GaAs substrates using interfacial misfit (IMF) arrays

2007 ◽  
Author(s):  
M. Mehta ◽  
G. Balakrishnan ◽  
M.N. Kutty ◽  
P. Patel ◽  
L.R. Dawson ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Gaas Substrates

Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates

2017 ◽  
Author(s):  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
Yu. M. Shernyakov ◽  
M. M. Kulagina ◽  
A. S. Payusov ◽  
...  
Keyword(s):  
Diode Lasers ◽  
High Index ◽  
Gaas Substrates

High performance long-wavelength QD diode lasers on GaAs substrates

2003 ◽  
Author(s):  
N.A. Maleev ◽  
A.R. Kovsh ◽  
A.E. Zhukov ◽  
S.S. Mikhrin ◽  
A.P. Vasil'ev ◽  
...  
Keyword(s):  
High Performance ◽  
Diode Lasers ◽  
Long Wavelength ◽  
Gaas Substrates

GaAs Substrates for High-Power Diode Lasers

2007 ◽  
pp. 121-171 ◽  
Author(s):  
Georg Müller ◽  
Patrick Berwian ◽  
Eberhard Buhrig ◽  
Berndt Weinert
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Gaas Substrates ◽  
Power Diode

High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

2002 ◽  
Vol 36 (11) ◽  
pp. 1315-1321 ◽  
Author(s):  
S. S. Mikhrin ◽  
A. E. Zhukov ◽  
A. R. Kovsh ◽  
N. A. Maleev ◽  
A. P. Vasil’ev ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Diode Lasers ◽  
Long Wavelength ◽  
Gaas Substrates

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

1986 ◽  
Vol 44 ◽  
pp. 816-817
Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Crystal Defects ◽  
Device Performance ◽  
Gaas Wafer ◽  
Surface Charging ◽  
Gaas Substrates ◽  
Voltage Contrast ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Sign in / Sign up

Export Citation Format

Share Document