Gain assisted long range surface plasmon using multiple quantum wells

Author(s):  
M. Alam ◽  
J. Meier ◽  
J. S. Aitchison ◽  
M. Mojahedi
2011 ◽  
Vol 415-417 ◽  
pp. 537-540
Author(s):  
Te Li ◽  
Er Juan Hao

The InP-based wafers with InGaAsP multiple Quantum Wells (QWs) were designed for the loss compensation of surface plasmon polaritons (SPPs). Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the gain of the quantum wells at 1.55μm assist the propagation of SPPs.


2014 ◽  
Vol 2 (5) ◽  
pp. 451-458 ◽  
Author(s):  
Jun Yin ◽  
Yang Li ◽  
Shengchang Chen ◽  
Jing Li ◽  
Junyong Kang ◽  
...  

2017 ◽  
Vol 6 (1) ◽  
pp. 30 ◽  
Author(s):  
Kyung Rock Son ◽  
Byeong Ryong Lee ◽  
Min Ho Jang ◽  
Hyun Chul Park ◽  
Yong Hoon Cho ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  

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